Photomicrosensor (Reflective) EE-SB5(-B) Be sure to read Precautions on page 25. Dimensions Features Dust-tight construction. Note: All units are in millimeters unless otherwise indicated. With a visible-light intercepting filter which allows objects to be sensed without being greatly influenced by the light radiated from fluorescent lamps. Mounted with M3 screws. Model with soldering terminals (EE-SB5). Model with PCB terminals (EE-SB5-B). Two, 3.20.2 dia. holes Optical axis Optical axis Absolute Maximum Ratings (Ta = 25C) Item Symbol Rated value 90.2 11.50.2 Emitter Forward current I 50 mA F (see note 1) Four, 0.5 Pulse forward cur- I 1 A FP rent (see note 2) Four, 0.25 2.540.2 Reverse voltage V 4 V R 7.620.3 2.540.2 Detector CollectorEmitter V 30 V EE-SB5 EE-SB5-B CEO voltage EmitterCollector V --- ECO voltage Collector current I 20 mA C Internal Circuit Collector dissipa- P 100 mW C tion (see note 1) A C Ambient tem- Operating Topr 25C to 80C Unless otherwise specified, the perature tolerances are as shown below. Storage Tstg 30C to 80C Soldering temperature Tsol 260C K E Dimensions Tolerance (see note 3) 3 mm max. 0.3 Note: 1. Refer to the temperature rating chart if the ambient temper- Terminal No. Name 3 < mm 6 0.375 ature exceeds 25C. A Anode 6 < mm 10 0.45 2. The pulse width is 10 s maximum with a frequency of K Cathode 100 Hz. 10 < mm 18 0.55 C Collector 3. Complete soldering within 10 seconds. 18 < mm 30 0.65 E Emitter Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wavelength 940 nm typ. I = 20 mA P F Detector Light current I 200 A min., 2,000 A max. I = 20 mA, V = 10 V L F CE White paper with a reflection ratio of 90%, d = 5 mm (see note) Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I 2 A max. I = 20 mA, V = 10 V with no reflec- LEAK F CE tion CollectorEmitter saturated volt- V (sat) --- --- CE age Peak spectral sensitivity wave- 850 nm typ. V = 10 V P CE length Rising time tr 30 s typ. V = 5 V, R = 1 k, I = 1 mA CC L L Falling time tf 30 s typ. V = 5 V, R = 1 k, I = 1 mA CC L L Note: The letter d indicates the distance between the top surface of the sensor and the sensing object. 166 EE-SB5(-B) Photomicrosensor (Reflective) Engineering Data Forward Current vs. Collector Light Current vs. Forward Current Light Current vs. CollectorEmitter Dissipation Temperature Rating Characteristics (Typical) Voltage Characteristics (Typical) Ta = 25C d = 5 mm Ta = 25C Sensing object: V = 10 V CE I = 40 mA White paper with F d = 5 mm a reflection factor Sensing object: of 90% White paper with a reflection fac tor of 90% I = 30 mA F I = 20 mA F I = 10 mA F CollectorEmitter voltage V (V) Ambient temperature Ta (C) Forward current I (mA) CE F Relative Light Current vs. Dark Current vs. Ambient Response Time vs. Load Ambient Temperature Temperature Characteristics Resistance Characteristics Characteristics (Typical) (Typical) (Typical) V = 5 V V = 10 V CC CE I = 20 mA F Ta = 25C 0lx V = 5 V CE Load resistance R (k) L Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Distance Characteristics Sensing Position Characteristics Sensing Position Characteristics (Typical) (Typical) (Typical) I = 20 mA F I = 20 mA F V = 10 V CE V = 10 V CE Ta = 25C Ta = 25C d = 5 mm 1 d = 5 mm 1 Sensing Sensing object: White paper object: White with a reflection paper with a factor of 90% reflection factor of 90% Ta = 25C I = 20 mA F V = 10 V CE Sensing object: White paper with a reflection factor of 90% Distance d (mm) 2 Distance d (mm) Distance d (mm) 2 Sensing Angle Characteristics Response Time Measurement (Typical) Circuit Input 90 % Output 10 % Input Ta = 25C I = 20 mA F V = 10 V CE Output d = 5 mm Sensing object: White paper with a reflection factor of 90% Angle deviation () EE-SB5(-B) Photomicrosensor (Reflective) 167 Forward current I (mA) Light current I (A) Relative light current I (%) F L L Relative light current I (%) L Collector dissipation P (mW) C Relative light current I (%) L Dark Current I (nA) D Light current I (mA) L Relative light current I (%) L Response time tr, tf (s) Light current I (mA) L