EESX1082 Omron

Photomicrosensor (Transmissive) EE-SX1082 Dimensions Features Horizontal sensing aperture. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. High resolution with a 0.2-mm-wide aperture. E Absolute Maximum Ratings (Ta = 25C) C Item Symbol Rated value Emitter Forward current I 50 mA F (see note 1) Pulse forward cur- I 1 A FP rent (see note 2) Reverse voltage V 4 V R Detector CollectorEmitter V 30 V CEO voltage EmitterCollector V --- ECO voltage Collector current I 20 mA C Collector dissipa- P 100 mW C tion (see note 1) Ambient tem- Operating Topr 40C to 85C Internal Circuit perature Storage Tstg 40C to K C 100C Soldering temperature Tsol 260C (see note 3) Unless otherwise specified, the A E tolerances are 0.2 mm. Note: 1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25C. Terminal No. Name 2. The pulse width is 10 s maximum with a frequency of A Anode 100 Hz. K Cathode 3. Complete soldering within 10 seconds. C Collector E Emitter Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wavelength 920 nm typ. I = 20 mA P F Detector Light current I 0.12 mA min. I = 20 mA, V = 5 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK CollectorEmitter saturated V (sat) 0.08 V typ., 0.4 V max. I = 20 mA, I = 0.05 mA CE F L voltage Peak spectral sensitivity wave- 850 nm typ. V = 10 V P CE length Rising time tr 100 s typ. V = 5 V, R = 50 k , I = 0.1 mA CC L L Falling time tf 1,000 s typ. V = 5 V, R = 50 k , I = 0.1 mA CC L L 80 EE-SX1082 Photomicrosensor (Transmissive) Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25C V = 5 V IF CE Ta = 30C PC Ta = 25C Ta = 70C Forward current I (mA) F Forward voltage V (V) Ambient temperature Ta (C) F Relative Light Current vs. Ambi- Light Current vs. CollectorEmitter Dark Current vs. Ambient ent Temperature Characteristics Voltage Characteristics (Typical) Temperature Characteristics (Typical) (Typical) I = 20 mA Ta = 25C F V = 10 V CE V = 5 V CE 0 lx I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F CollectorEmitter voltage V (V) CE Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics Response Time Measurement Response Time vs. Load Resist- (Typical) Circuit ance Characteristics (Typical) V = 5 V CC Input I = 20 mA F Ta = 25C V = 10 V CE Ta = 25C 90 % Output 10 % (Center of optical axis) - 0 d + Input Output Load resistance R (k ) L Distance d (mm) EE-SX1082 Photomicrosensor (Transmissive) 81 Response time tr, tf (s) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) Relative light current I (%) L Forward current I (mA) L F Dark current I (nA) D Light current I (mA) L