Photomicrosensor (Transmissive) EE-SX1096-W11 Be sure to read Precautions on page 24. Dimensions Features Pre-wired Sensors (AWG28). Note: All units are in millimeters unless otherwise indicated. Solder-less lead wire connection to increase reliability. 250.2 Two, R1 With a horizontal aperture. 190.15 Optical axis 60.2 50.2 Absolute Maximum Ratings (Ta = 25 C) Two, C2 Item Symbol Rated value Four, C0.3 Two, 3.20.2 dia. holes Emitter Forward current I 50 mA F 12.60.2 (see note 1) Emitter Detector 3.40.2 Pulse forward cur- I 1 A FP 2.10.15 BA rent (see note 2) Optical axis Sensing 2.10.15 0.50.1 window Reverse voltage V 4 V R 100.2 0.50.1 Detector CollectorEmitter V 30 V CEO 7.20.2 3.1 voltage 2.50.1 EmitterCollector V --- ECO 610MIN voltage KA EC 4 Four, Wires UL1061, Collector current I 20 mA 3.55 C AWG 28 Cross section A-A 11.60.2 Cross section B-B Collector dissipa- P 100 mW C BA tion (see note 1) Ambient tem- Operating Topr 25 C to 80 C Internal Circuit perature Storage Tstg 25 C to 85 C A E Unless otherwise specified, the Note: 1. Refer to the temperature rating chart if the ambient tem- tolerances are as shown below. perature exceeds 25C. K C 2. The pulse width is 10 s maximum with a frequency of Dimensions Tolerance 100 Hz. 3 mm max. 0.3 Terminal 3. If you mount the Sensor with screws, use M3 screws, spring Color Name No. washers, and flat washers and use a tightening torque of 0.5 3 < mm 6 0.375 Nm max. A Red Anode 6 < mm 10 0.45 4. You should use the product in the condition without any K Black Cathode stress on the cable. 10 < mm 18 0.55 C White Collector 18 < mm 30 0.65 E Green Emitter Electrical and Optical Characteristics (Ta = 25 C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wavelength 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 14 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK CollectorEmitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- 850 nm typ. V = 10 V P CE length Rising time tr 4 s typ. V = 5 V, R = 100 , I = 5 mA CC L L Falling time tf 4 s typ. V = 5 V, R = 100 , I = 5 mA CC L L 146 EE-SX1096-W11 Photomicrosensor (Transmissive) Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25C V = 10 V IF CE Ta = 30C PC Ta = 25C Ta = 70C Forward current I (mA) Ambient temperature Ta (C) F Forward voltage V (V) F Light Current vs. CollectorEmitter Dark Current vs. Ambient Relative Light Current vs. Voltage Characteristics (Typical) Temperature Characteristics Ambient Temperature Character- (Typical) istics (Typical) Ta = 25C I = 20 mA V = 10 V F CE V = 5 V 0 lx CE I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F CollectorEmitter voltage V (V) CE Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics Sensing Position Characteristics Response Time vs. Load Resis- (Typical) (Typical) tance Characteristics (Typical) 120 120 V = 5 V CC I = 20 mA F Ta = 25C I = 20 mA F V = 10 V CE V = 10 V CE Ta = 25C 100 100 Ta = 25C (Center of optical axis) 80 80 d d 60 60 40 40 20 20 0 0 0.5 0.25 0 0.25 0.5 0.75 1.0 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Load resistance R (k) Distance d (mm) L Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1096-W11 Photomicrosensor (Transmissive) 147 Response time tr, tf (s) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) Relative light current I (%) L L Forward current I (mA) F (Center of optical axis) Dark current I (nA) D Relative light current I (%) L Light current I (mA) L