Photomicrosensor (Transmissive) EE-SX1108 Be sure to read Precautions on page 24. Dimensions Features Ultra-compact with a 5-mm-wide sensor and a 2-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB surface mounting type. High resolution with a 0.3-mm-wide aperture. Absolute Maximum Ratings (Ta = 25C) Item Symbol Rated value Emitter Forward current I 25 mA F (see note 1) Pulse forward cur- I 100 mA FP rent (see note 2) Reverse voltage V 5 V R Optical Detector CollectorEmitter V 20 V axis CEO voltage EmitterCollector V 5 V ECO voltage Cross section AA Collector current I 20 mA C Collector dissipa- P 75 mW Recommended C Internal Circuit Soldering Pattern tion (see note 1) Ambient tem- Operating Topr 30C to 85C perature Storage Tstg 40C to 90C Reflow soldering Tsol 255C (see note 3) Terminal No. Name Manual soldering Tsol 350C (see note 3) A Anode K Cathode Unless otherwise specified, the Note: 1. Refer to the temperature rating chart if the ambient temper- C Collector ature exceeds 25C. tolerances are 0.15 mm. E Emitter 2. Duty: 1/100 Pulse width: 0.1 ms 3. Complete soldering within 10 seconds for reflow soldering and within 3 seconds for manual soldering. Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.1 V typ., 1.3 V max. I = 5 mA F F Reverse current I 10 A max. V = 5 V R R Peak emission wavelength 940 nm typ. I = 20 mA P F Detector Light current I 50 A min., 150 A typ., I = 5 mA, V = 5 V L F CE 500 A max. Dark current I 100 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK CollectorEmitter saturated voltage V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 50 A CE F L Peak spectral sensitivity wavelength 900 nm typ. --- P Rising time tr 10 s typ. V = 5 V, R = 1 k, CC L I = 100 A L Falling time tf 10 s typ. V = 5 V, R = 1 k, CC L I = 100 A L 32 EE-SX1108 Photomicrosensor (Transmissive) Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25C V = 5 V CE Forward current I (mA) Ambient temperature Ta (C) Forward voltage V (V) F F Light Current vs. CollectorEmitter Dark Current vs. Ambient Tem- Relative Light Current vs. Ambient Voltage Characteristics (Typical) perature Characteristics (Typical) Temperature Characteristics (Typical) Ta = 25C I = 5 mA F V = 5 V CE I = 10 mA F V = 10 V CE V = 2 V CE I = 5 mA F CollectorEmitter voltage V (V) CE Ambient temperature Ta (C) Ambient temperature Ta (C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (Typical) (Typical) V = 5 V CC I = 5 mA I = 5 mA F F Ta = 25C V = 5 V V = 5 V CE CE Load resistance R (k) L Distance d (mm) Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1108 Photomicrosensor (Transmissive) 33 Light current I (A) Forward current I (mA) L F Response time tr, tf (s) Collector dissipation P (mW) C Forward current I (mA) Relative light current I (%) Relative light current I (%) F L L Light current I (A) L Relative light current I (%) Dark current I (nA) L D
