Photomicrosensor (Transmissive) EE-SX1161-W11 Be sure to read Precautions on page 24. Dimensions Features Dust-proof model. Note: All units are in millimeters unless otherwise indicated. Pre-wired Sensors (AWG28). Solder-less lead wire connection to increase reliability. 9.40.2 Optical axis Absolute Maximum Ratings (Ta = 25 C) 23.70.2 Item Symbol Rated value 50.2 Four, C0.4 Emitter Forward current I 50 mA F (see note 1) 20.15 Pulse forward cur- I 1 A FP rent (see note 2) Emitter Detector 12.950.25 Reverse voltage V 4 V 14.20.15 R 3.20.15 4.55 Four, R1.6 1.10.1 1.10.1 Sensing 0.2 B A 1.40.2 Four, R1 Detector CollectorEmitter V 30 V Optical window CEO 2.1 axis voltage 2.1 6.350.25 EmitterCollector V 5 V ECO 12.50.2 10.850.1 10.850.1 9.70.2 voltage 4.5 3.20.25 Collector current I 20 mA Two, 2.65 C 3.1 Collector dissipa- P 100 mW C 610MIN. tion (see note 1) E 4 C K A B A Ambient tem- Operating Topr 25 C to 80C Cross section A-A Cross section B-B 3.55 perature Storage Tstg 25 C to 85C 11.40.2 Note: 1. Refer to the temperature rating chart if the ambient tem- Internal Circuit perature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of A E Unless otherwise specified, the 100 Hz. tolerances are as shown below. 3. If you mount the Sensor with screws, use M3 screws, and flat washers and use a tightening torque of 0.5 Nm max. K C Dimensions Tolerance 3 mm max. 0.3 Terminal Color Name No. 3 < mm 6 0.375 A Red Anode 6 < mm 10 0.45 K Black Cathode 10 < mm 18 0.55 C White Collector 18 < mm 30 0.65 E Green Emitter Electrical and Optical Characteristics (Ta = 25 C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wavelength 940 nm typ. I = 20 mA P F Detector Light current I 0.625 mA min. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK CollectorEmitter saturated volt- V (sat) 0.15 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- 850 nm typ. V = 10 V P CE length Rising time tr 4 s typ. V = 5 V, R = 100 , I = 5 mA CC L L Falling time tf 4 s typ. V = 5 V, R = 100 , I = 5 mA CC L L 138 EE-SX1161-W11 Photomicrosensor (Transmissive) Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) 60 150 22 Ta = 25C 20 IF V = 10 V CE 50 18 16 PC Ta = 25C 40 100 14 Ta = 70C 12 30 10 8 20 50 6 4 10 2 0 0 0 0 10 20 30 40 50 -40 -20 0 20 40 60 80 100 Forward voltage V (V) F Forward current I (mA) Ambient temperature Ta (C) F Dark Current vs. Ambient Relative Light Current vs. Voltage Characteristics (Typical) Temperature Characteristics Ambient Temperature Character- (Typical) istics (Typical) 26 I = 20 mA F Ta = 25C V = 10 V CE 24 V = 5 V CE 0 lx 22 20 I = 50 mA F 18 16 I = 40 mA F 14 I = 30 mA F 12 10 I = 20 mA F 8 6 I = 10 mA 4 F 2 0 01234567 8 910 Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics Sensing Position Characteristics Response Time vs. Load Resis- (Typical) (Typical) tance Characteristics (Typical) 120 120 V = 5 V CC I = 20 mA F IF = 20 mA Ta = 25C V = 10 V CE V = 10 V CE 100 100 Ta = 25C Ta = 25C (Center of d optical axis) 80 80 d 60 60 40 40 20 20 0 0 -2.5 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 2.5 -2.5 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 2.5 Distance d (mm) Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1161-W11 Photomicrosensor (Transmissive) 139 Forward current I (mA) F Light current I (mA) L Collector dissipation P (mW) C Forward current I (mA) Relative light current I (%) F L Relative light current I (%) L Dark current I (nA) D Relative light current I (%) L Light current I (mA) L (Center of optical axis)