EE-SX1340

Photomicrosensor (Transmissive) EE-SX1340 Compact Slot / SMD Type (Slot width: 4 mm) Unique 4 mm Slot width. PCB surface mounting type. High resolution with a 0.5-mm-wide aperture. Be sure to read Safety Precautions on page 3. Ordering Information Photomicrosensor Sensing Connecting Aperture size (H W) Appearance Sensing distance Output type Model method method (mm) 5.5 Transmissive Emitter 1.04 1.4 SMT Phototransistor EE-SX1340 4 mm (slot width) (slot type) Detector 1.4 0.5 4 8 Ratings, Characteristics and Exterior Specifications Absolute Maximum Ratings (Ta = 25C) Electrical and Optical Characteristics (Ta = 25C) Item Symbol Rated value Unit Remarks Value Item Symbol Unit Condition MIN. TYP. MAX. Emitter Emitter Forward IF 30 mA --- *1 current Forward VF --- 1.2 1.5 V IF = 30 mA voltage Duty ratio: Pulse forward 1% Reverse IFP 100 mA IR --- 0.01 10 AVR = 4 V current Puls width: current 0.1 ms Peak emission P --- 940 --- nm IF = 20 mA Reverse wavelength VR 4 V --- voltage Detector Detector IF = 20 mA, Light current IL 0.55 --- 5.5 mA VCE = 10 V Collector- VCEO 12 V --- Emitter voltage VCE = 10 V, Dark current ID --- 10 200 nA Emitter- 0 lx Collector VECO 5 V --- Collector- voltage Emitter IF = 20 mA, VCE (sat) --- 0.1 0.4 V saturated IL = 0.1 mA Collector IC 20 mA --- voltage current Collector Peak spectral PC 50 mW --- *1 dissipation sensitivity P --- 900 --- nm VCE = 5 V wavelength Operating Topr -30 to 85 C --- *1 VCC = 5 V, temperature Rising time tr --- 11 --- s RL = 100 Storage Tstg -40 to 100 C --- *1 IL = 1 mA * temperature VCC = 5 V, Reflow soldering 10 sec. Tsol 255 C Falling time tf --- 14 --- s RL = 100 temperature max. *2 IL = 1 mA * *1. Continuous Forward Current and Collector Power Dissipation * Refer to the following timing diagram for tr and tf. must be derated complying. The product should be used without IL freezing or condensation. Input VCC Input *2. In case of reflow soldering, conditions which are shown at the 0 temperature profile should be kept. t Output 90% Output 0 10% Exterior Specifications t RL t r t f Material Connecting method Weight (g) Case SMT 0.2 PPS 1EE-SX1340 Engineering Data (Reference value) Fig 1. Forward Current vs. Collector Fig 2. Forward Current vs. Forward Fig 3. Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) 60 60 60 10 Ta = 25C 9 PC VCE = 5 V 50 50 50 8 Ta =30C 7 40 Ta = 25C 40 40 6 IF Ta= 85C 30 30 30 5 4 20 20 20 3 2 10 10 10 1 0 0 0 0 010 20 30 40 50 -40 -20 0 20 40 60 80 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Ambient temperature Ta (C) Forward voltage VF (V) Forward current IF (mA) Fig 4. Light Current vs. Collector- Fig 5. Relative Light Current vs. Ambient Fig 6. Dark Current vs. Ambient Emitter Voltage Characteristics Temperature Characteristics (Typical) Temperature Characteristics (Typical) (Typical) 120 1000 IF=20mA 13 VCE = 10 V VCE=5V 0 l x Ta = 25C 110 11 100 100 9 90 10 7 5 80 1 3 70 1 60 0.1 -40 -20 0 20406080 100 0 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 0123456789 10 Ambient temperature Ta (C) Ambient temperature Ta (C) Collector-Emitter voltage VCE (V) Fig 7. Response Time vs. Load Fig 8. Sensing Position Characteristics Fig 9. Sensing Position Characteristics Resistance Characteristics (Typical) (Typical) (Typical) 10,000 120 120 VCC = 5 V IL =1 mA Ta = 25C 100 100 1,000 80 80 IF = 20 mA VCE = 5 V 100 60 Ta = 25C 60 IF = 20 mA tf (Center of VCE = 5 V optical axis) Ta = 25C 40 40 10 tr (Center of 20 20 optical axis) 1 0 0 0.01 0.1 1 10 -1 -0.75 -0.5 -0.25 0 0.25 0.5 0.75 1 -2 -1.5 -1 -0.5 0 0.5 1 1.5 2 Load resistance RL (k) Distance d (mm) Distance d (mm) 2 Response time tr, tf (s) Forward current IF (mA) Light current IL (mA) Collector dissipation PC (mW) Relative light current IL (%) Relative light current IL (%) Forward current IF (mA) Relative light current IL (%) Light current IL (A) Dark current ID (nA)