X-On Electronics has gained recognition as a prominent supplier of EE-SX1350 Optical Switches, Transmissive, Phototransistor Output across the USA, India, Europe, Australia, and various other global locations. EE-SX1350 Optical Switches, Transmissive, Phototransistor Output are a product manufactured by Omron. We provide cost-effective solutions for Optical Switches, Transmissive, Phototransistor Output, ensuring timely deliveries around the world.

EE-SX1350 Omron

EE-SX1350 electronic component of Omron
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Part No.EE-SX1350
Manufacturer: Omron
Category: Optical Switches, Transmissive, Phototransistor Output
Description: Optical Switches, Transmissive, Phototransistor Output Transmissive SMT Phototransistor 5mm
Datasheet: EE-SX1350 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.3931 ea
Line Total: USD 1.39 
Availability - 230
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3104
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 25
Multiples : 25
25 : USD 1.4625
400 : USD 1.1462
800 : USD 1.0713
1200 : USD 1.055
2800 : USD 1.0387
5200 : USD 1.0237
7600 : USD 1.0075
10000 : USD 0.9925

3104
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 400
Multiples : 400
400 : USD 1.3568
800 : USD 1.1273

230
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 1.3931
10 : USD 1.1812
30 : USD 1.0649
100 : USD 0.9331
400 : USD 0.876
800 : USD 0.8493

5238
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.441
10 : USD 1.1
250 : USD 1.0472
400 : USD 0.9064
800 : USD 0.8822

150
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 2.618
10 : USD 1.862
12 : USD 1.526
31 : USD 1.442
100 : USD 1.414

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Slot Width
Aperture Width
Collector- Emitter Voltage VCEO Max
Maximum Collector Current
Mounting Style
Maximum Operating Temperature
Minimum Operating Temperature
Series
Packaging
If - Forward Current
Output Type
Sensing Distance
Sensing Method
Wavelength
Brand
Number Of Channels
Fall Time
Pd - Power Dissipation
Rise Time
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the EE-SX1350 from our Optical Switches, Transmissive, Phototransistor Output category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EE-SX1350 and other electronic components in the Optical Switches, Transmissive, Phototransistor Output category and beyond.

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Photomicrosensor (Transmissive) EE-SX1350 Compact Slot / SMD Type (Slot width: 5 mm) Unique 5 mm Slot width. PCB surface mounting type. High resolution with a 0.5-mm-wide aperture. Be sure to read Safety Precautions on page 3. Ordering Information Photomicrosensor Sensing Connecting Aperture size (H W) Appearance Sensing distance Output type Model method method (mm) 9 Transmissive Emitter 1.4 1.4 SMT 5 mm (slot width) Phototransistor EE-SX1350 (slot type) Detector 1.4 0.5 4 9 Ratings, Characteristics and Exterior Specifications Absolute Maximum Ratings (Ta = 25C) Electrical and Optical Characteristics (Ta = 25C) Item Symbol Rated value Unit Remarks Value Item Symbol Unit Condition MIN. TYP. MAX. Emitter Emitter Forward IF 30 mA --- *1 current Forward VF --- 1.2 1.5 V IF = 30 mA voltage Duty ratio: Pulse forward 1% Reverse IFP 100 mA IR --- 0.01 10 AVR = 4 V current Puls width: current 0.1 ms Peak emission P --- 940 --- nm IF = 20 mA Reverse wavelength VR 4 V --- voltage Detector Detector IF = 20 mA, Light current IL 0.4 --- 4 mA Collector- VCE = 10 V VCEO 12 V --- Emitter voltage VCE = 10 V, Dark current ID --- 10 200 nA 0 lx Emitter- Collector VECO 5 V --- Collector- voltage Emitter IF = 20 mA, VCE (sat) --- 0.1 0.4 V Collector saturated IL = 0.1 mA IC 20 mA --- current voltage Peak spectral Collector PC 50 mW --- *1 sensitivity P --- 900 --- nm VCE = 5 V dissipation wavelength Operating Topr -30 to 85 C --- *1 temperature VCC = 5 V, Rising time tr --- 11 --- s RL = 100 Storage Tstg -40 to 100 C --- *1 IL = 1 mA * temperature VCC = 5 V, Reflow soldering 10 sec. Tsol 255 C Falling time tf --- 14 --- s RL = 100 temperature max. *2 IL = 1 mA * *1. Continuous Forward Current and Collector Power Dissipation * Refer to the following timing diagram for tr and tf. must be derated complying. The product should be used without IL freezing or condensation. Input VCC Input *2. In case of reflow soldering, conditions which are shown at the 0 temperature profile should be kept. t Output 90% Output 0 10% Exterior Specifications t RL t r t f Material Connecting method Weight (g) Case SMT 0.3 PPS 1EE-SX1350 Engineering Data (Reference value) Fig 1. Forward Current vs. Collector Fig 2. Forward Current vs. Forward Fig 3. Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) 60 60 60 4 Ta = 25C VCE = 5 V PC 3.5 50 50 50 Ta =30C 3 40 40 40 Ta = 25C 2.5 IF Ta= 85C 30 30 30 2 1.5 20 20 20 1 10 10 10 0.5 0 0 0 0 010 20 30 40 50 -40 -20 0 20 40 60 80 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Ambient temperature Ta (C) Forward current IF (mA) Forward voltage VF (V) Fig 4. Light Current vs. Collector- Fig 5. Relative Light Current vs. Ambient Fig 6. Dark Current vs. Ambient Emitter Voltage Characteristics Temperature Characteristics (Typical) Temperature Characteristics (Typical) (Typical) 120 1000 4 IF = 20 mA VCE = 10 V VCE = 5 V 0 l x Ta = 25C 3.5 110 100 3 100 2.5 10 90 2 1.5 80 1 1 70 IF = 10 mA 0.5 IF = 5 mA 0.1 60 0 -40 -20 0 20 40 60 80 100 -30 -20 -10 0 10 20 30 40 50 60 70 8090 01234567 8 910 Ambient temperature Ta (C) Ambient temperature Ta (C) Collector-Emitter voltage VCE (V) Fig 7. Response Time vs. Load Fig 8. Sensing Position Characteristics Fig 9. Sensing Position Characteristics Resistance Characteristics (Typical) (Typical) (Typical) 10,000 120% 120% VCC = 5 V IL =1 mA Ta = 25C 100% 100% 1,000 80% 80% IF = 20 mA VCE = 5 V 100 60% Ta = 25C 60% IF = 20 mA (Center of tf VCE = 5 V optical axis) Ta = 25C 40% 40% 10 tr (Center of 20% 20% optical axis) 1 0% 0% 0.01 0.1 1 10 -1 -0.75 -0.5 -0.25 0 0.25 0.5 0.75 1 -2 -1.5 -1 -0.5 0 0.5 1 1.5 2 Load resistance RL (k) Distance d (mm) Distance d (mm) 2 IF = 20 mA IF = 30 mA IF = 40 mA IF = 50 mA Response time tr, tf (s) Light current IL (mA) Forward current IF (mA) Collector dissipation PC (mW) Relative light current IL (%) Relative light current IL (%) Forward current IF (mA) Relative light current IL (%) Dark current ID (nA) Light current IL (mA)

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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