EE-SX1105 Omron

Photomicrosensor (Transmissive) EE-SX1105 Dimensions Features Ultra-compact with a sensor width of 4.9 mm and a slot width of 2 mm. Note: All units are in millimeters unless otherwise indicated. Low-height of 3.3 mm. PCB mounting type. High resolution with a 0.4-mm-wide aperture. RoHS Compliant. Absolute Maximum Ratings (Ta = 25C) Two, C0.7 Gate Item Symbol Rated value Emitter Forward current I 50 mA (see note 1) Optical F axis Pulse forward current I --- FP Four, 0.5 Reverse voltage V 5 V Two, R0.15 R Four, 0.4 5 min. Two, R0.3 Detector CollectorEmitter V 30 V CEO Four, voltage EmitterCollector V 4.5 V ECO voltage Cross section AA Collector current I 30 mA C Collector dissipation P 80 mW (see note 1) C Internal Circuit Ambient Operating T 25 C to 85 C opr temperature Storage T 30 C to 85 C stg 260 C (see note 2) Soldering temperature T sol Note: 1. Refer to the temperature rating chart if the ambient tem- Terminal No. Name perature exceeds 25 C. A Anode 2. Complete soldering within 3 seconds. K Cathode Unless otherwise specified, Ordering Information C Collector the tolerances are 0.2 mm. E Emitter Description Model Photomicrosensor (transmissive) EE-SX1105 Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.3 V typ., 1.6 V max. I = 50 mA F F Reverse current I 10 A max. V = 5 V R R Peak emission wavelength 950 nm typ. I = 50 mA P F Detector Light current I 0.2 mA min. I = 20 mA, V = 5 V L F CE Dark current I 500 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK CollectorEmitter saturated voltage V 0.4 V max. I = 20 mA, I = 0.1 mA CE (sat) F L Peak spectral sensitivity wavelength 800 nm typ. V = 5 V P CE Rising time tr 10 s typ. V = 5 V, R = 100 , I = 20 mA CC L F Falling time tf 10 s typ. V = 5 V, R = 100 , I = 20 mA CC L F Photomicrosensor (Transmissive) EE-SX1105 127 Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) 2.5 Ta = 25C V = 5 V CE 2 1.5 1 0.5 Ambient temperature Ta (C) Forward voltage V (V) Forward current I (mA) F F Relative Light Current vs. Ambi- Light Current vs. CollectorEmitter Dark Current vs. Ambient Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) 160 Ta = 25C I = 20 mA F 140 V = 30 V V = 5 V CE CE V = 20 V CE 120 I = 50 mA F V = 10 V CE 100 I = 40 mA F 80 I = 30 mA F 60 I = 20 mA F 40 I = 10 mA F 20 0 40 20 0 20 40 60 80 100 CollectorEmitter voltage V (V) Ambient temperature Ta (C) Ambient temperature Ta (C) CE Response Time vs. Light Current Sensing Position Characteristics Sensing Position Characteristics Characteristics (Typical) (Typical) (Typical) Ta = 25C I = 20 mA F I = 20 mA F V = 5 V V = 5 V CE CE V = 5 V CE Ta = 25C Ta = 25C RL = 1K RL = 500 RL = 100 Light current l (mA) Distance d (mm) Distance d (mm) t Response Time Measurement Circuit Input 90 % Output 10 % Input Output 128 Photomicrosensor (Transmissive) EE-SX1105 Response time tr, tf (s) Light current I (mA) Forward current I (mA) L F Collector dissipation Pc (mW) Relative light current I (%) L Forward current I (mA) F Relative light current I (%) L Dark current I (nA) Light current I (mA) D L Relative light current I (%) L