Photomicrosensor (Transmissive) EE-SX1046 Be sure to read Precautions on page 24. Dimensions Features With a horizontal sensing aperture. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. High resolution with a 0.5-mm-wide aperture. 6.5 Absolute Maximum Ratings (Ta = 25C) Optical axis 5 2.5 Item Symbol Rated value Emitter Forward current I 50 mA F 100.3 (see note 1) 0.50.1 Pulse forward cur- I 1 A FP rent (see note 2) 0.50.1 Optical axis Reverse voltage V 4 V Optical R axis Detector CollectorEmitter V 30 V CEO voltage Four, 0.25 EmitterCollector V --- 9 min. ECO 0.3 max. 0.25 voltage Four, 0.25 max. Collector current I 20 mA C Collector dissipa- P 100 mW C Cross section BB Cross section AA tion (see note 1) Ambient tem- Operating Topr 25C to 85C perature Storage Tstg 30C to Internal Circuit 100C K C Soldering temperature Tsol 260C Unless otherwise specified, the (see note 3) tolerances are as shown below. Note: 1. Refer to the temperature rating chart if the ambient temper- A E Dimensions Tolerance ature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 3 mm max. 0.3 100 Hz. Terminal No. Name 3 < mm 6 0.375 3. Complete soldering within 10 seconds. A Anode 6 < mm 10 0.45 K Cathode 10 < mm 18 0.55 C Collector 18 < mm 30 0.65 E Emitter Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wavelength 920 nm typ. I = 20 mA P F Detector Light current I 1.2 mA min., 14 mA max. I = 20 mA, V = 5 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK CollectorEmitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- 850 nm typ. V = 10 V P CE length Rising time tr 4 s typ. V = 5 V, R = 100 , I = 5 mA CC L L Falling time tf 4 s typ. V = 5 V, R = 100 , I = 5 mA CC L L 76 EE-SX1046 Photomicrosensor (Transmissive) Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25C V = 5 V IF CE Ta = 30C PC Ta = 25C Ta = 70C Forward current I (mA) F Ambient temperature Ta (C) Forward voltage V (V) F Relative Light Current vs. Light Current vs. CollectorEmitter Dark Current vs. Ambient Ambient Temperature Character- Voltage Characteristics (Typical) Temperature Characteristics istics (Typical) (Typical) V = 10 V Ta = 25C I = 20 mA CE F 0 lx V = 5 V CE I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F CollectorEmitter voltage V (V) Ambient temperature Ta (C) CE Ambient temperature Ta (C) Sensing Position Characteristics Sensing Position Characteristics Response Time vs. Load Resis- (Typical) (Typical) tance Characteristics (Typical) 120 120 V = 5 V I = 20 mA CC F I = 20 mA F Ta = 25C V = 5 V CE V = 10 V CE 100 Ta = 25C 100 Ta = 25C (Center of 80 80 optical axis) d d 60 60 40 40 20 20 0 0 0.75 0.5 0.25 0 0.25 0.5 0.75 1.5 1.0 0.5 0 0.5 1.0 1.5 Distance d (mm) Distance d (mm) Load resistance R (k) L Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1046 Photomicrosensor (Transmissive) 77 Response time tr, tf (s) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) Relative light current I (%) L L Forward current I (mA) F (Center of optical axis) Dark current I (nA) D Relative light current I (%) L Light current I (mA) L