EE-SX1061 Omron

Photomicrosensor EE-SX1061 (Transmissive) Dimensions Features Note: All units are in millimeters unless otherwise indicated. General-purpose model with a 4.6-mm-wide slot. PCB mounting type. Absolute Maximum Ratings (Ta = 25C) Item Symbol Rated value Emitter Forward current I 50 mA F (see note 1) Pulse forward I --- FP current Reverse voltage V 4 V R CollectorEmitter Detector V 30 V CEO voltage EmitterCollector V --- ECO voltage Collector current I 20 mA C Collector P 100 mW C dissipation (see note 1) Ambient Operating Topr 40C to Internal Circuit temperature 85C K C Storage Tstg 40C to Unless otherwise specified, the 100C tolerances are as shown below. Soldering temperature Tsol 260C A E Dimensions Tolerance (see note 2) 3 mm max. 0.3 Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. Terminal No. Name 3 < mm 6 0.375 2. Complete soldering within 10 seconds. A Anode 6 < mm 10 0.45 K Cathode 10 < mm 18 0.55 C Collector E Emitter 18 < mm 30 0.65 Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wavelength 940 nm typ. I = 20 mA P F Detector Light current I 1.3 mA min., 26 mA max. I = 20 mA, V = 12 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 x D CE Leakage current I --- --- LEAK CollectorEmitter saturated V (sat) 0.8 V max. I = 10 mA, Vcc = 12 V, R = 22k CE F L voltage Peak spectral sensitivity 850 nm typ. V = 10 V P CE wavelength Rising time tr 1,000 A max. V = 12 V, R = 22k , I = 10 mA CC L L Falling time tf 1,000 A max. V = 12 V, R = 22k , I = 10 mA CC L L 64EE-SX1061 EE-SX1061 Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25 C V = 12 V I CE F Ta = 30C P C Ta = 25C Ta = 70C Ambient temperature Ta (C) Forward voltage V (V) Forward current I (mA) F F Light Current vs. CollectorEmitter Relative Light Current vs. Ambi- Dark Current vs. Ambient Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) 20 V = 10 V Ta = 25C CE I = 20 mA F 0 x 18 V = 12 V CE 16 I = 50 mA F 14 I = 40 mA F 12 10 I = 30 mA F 8 I = 20 mA F 6 4 I = 10 mA F 2 Ambient temperature Ta (C) CollectorEmitter voltage V (V) Ambient temperature Ta (C) CE Response Time vs. Load Resis- Sensing Position Characteristics Response Time Measurement tance Characteristics (Typical) (Typical) Circuit Vcc = 5 V I = 20 mA F Input Ta = 25C V = 12 V CE Ta = 25C 90 % Output 10 % (Center of optical axis) Input Output 2 1 1 2 3 4 Load resistance R (k ) Distance d (mm) L 65 Response time tr, tf ( s) Light current I (mA) Forward current I (mA) L F Collector dissipation Pc (mW) Relative light current I (%) Relative light current I (%) Forward current I (mA) L L F Dark current I (nA) Light current I (mA) D L