EE-SX1031 Omron

Photomicrosensor (Transmissive) EE-SX1031 Dual Channel Phototransistor Output Ideal for Encoder Applications High resolution (0.5 mm) sensing Separate LED/Phototransistor combinations within a single housing Be sure to read Safety Precautions on page 3. RoHS Compliant Model Number Structure EE-S X 1 031 (1) (2) (3) (4) (2) (3) (4) (1) Transmissive Phototransistor output Serial number Photomicrosensor Ordering Information Photomicrosensor Minimum Sensing Connecting Sensing Aperture size Appearance Output type Model packing unit method method distance (H W) (mm) (Unit: pcs) 13.6 Both emitting side Phototransistor Transmissive 3.4 mm 10.4 PCB mounting and detecting side (Dual-channel EE-SX1031 1 (slot type) (slot width) 2.1 0.5 2 ch output) 13.6 Note: Order in multiples of minimum packing unit. Ratings, Characteristics and Exterior Specifications Absolute Maximum Ratings (Ta = 25C) Electrical and Optical Characteristics (Ta = 25C) Item Symbol Rated value Unit Value Item Symbol Unit Condition Input MIN. TYP. MAX. 1 Forward current IF 50 * mA Emitter Pulse forward current --- Forward voltage VF --- 1.2 1.5 V IF = 30 mA Reverse voltage VR 4V Reverse current IR --- 0.01 10 AVR = 4 V Output Peak emission P(L) --- 940 --- nm IF = 20 mA wavelength Collector-Emitter voltage VCEO 30 V Detector Emitter-Collector voltage VECO --- VCE = 10 V, Collector current IC 20 mA Dark current ID --- 2 200 nA 0 lx 1 Collector dissipation PC 100 * mW Peak spectral Operating temperature Topr -25 to 85 C P(P) --- 850 --- nm VCE = 10 V sensitivity wavelength Storage temperature Tstg -30 to 100 C 2 Combination Soldering temperature 260 * C Light current IF = 20 mA, *1. Refer to the temperature rating chart if the ambient temperature IL 0.5 --- 14 mA CE = 10 V (collector current) V exceeds 25C. Collector-emitter IF = 20 mA, *2. Complete soldering within 10 seconds. VCE (sat) --- 0.15 0.4 V L = 0.1 mA saturated voltage I VCC = 5 V, Exterior Specifications Rising time tr --- 4 --- s L = 100 R IL = 5 mA Material Connecting method Weight (g) VCC = 5 V, Case Falling time tf --- 4 --- s RL = 100 PCB mounting 1.47 Polycarbonate L = 5 mA I 1EE-SX1031 Engineering Data (Reference value) Fig 1. Forward Current vs. Collector Fig 2. Forward Current vs. Forward Fig 3. Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) 60 16 60 PC Ta = 25 C 15 100 Ta = -30C VCE = 10 V 14 50 50 13 Ta = -25C IF 12 Ta = -70C 11 40 40 10 9 30 8 30 50 7 6 20 20 5 4 3 10 10 2 1 0 00 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -20 0 20 40 60 80 100 0 5 10 15 20 25 30 35 40 45 50 55 Forward voltage VF (mA) Ambient temperature Ta (C) Forward current IF (mA) Fig 4. Light Current vs. Collector- Fig 5. Relative Light Current vs. Fig 6. Dark Current vs. Ambient Emitter Voltage Characteristics Ambient Temperature Characteristics Temperature Characteristics (Typical) (Typical) (Typical) 6 10,000 11 Ta = 25C IF = 20 mA 10 VCE = 10 V VCE = 10 V 1,000 0 lx 5 9 IF = 40 mA Pc (max.) Rated 8 100 4 7 IF = 30 mA 10 6 3 5 1 4 2 IF = 10 mA IF = 20 mA VCE = 10 V 3 0.1 2 1 0.01 1 IF = 10 mA 0 0.001 0 02 4 6 8 10 12 14 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 Collector-emitter voltage VCE (V) Ambient temperature Ta (C) Ambient temperature Ta (C) Fig 7. Response Time vs. Load Fig 8. Sensing Position Characteristics Fig 9. Response Time Measurement Resistance Characteristics (Typical) (Typical) Circuit 500 120 Input IF = 20 mA Ta = 25C 300 VCE = 10 V 0 VCE = 10 V t Ta = 25C 100 RL = 4.7 k 90 % Output 100 0 10 % t 70 d 80 tf tr 50 A B IL 30 Input VCC RL = 1 k 60 10 RL = 500 k A 40 7 Output 5 RL 20 RL = 100 k 3 B 1 0 0.01 0.3 0.5 0.7 1 3 5 7 10 02 46 810 12 Load Resistance RL (k) Distance d (mm) 2 Forward current IF (mA) Switching regulator tr, tf (s) Light current IF (mA) Collector dissipation Pc (mW) Relative light current IL (%) Relative light current IL (mA) Forward current IF (mA) Dark current ID (nA) Light current IL (mA)