Photomicrosensor (Transmissive) EE-SX1320 Ultra-Compact Slot / SMD Type (Slot width: 2 mm) PCB surface mounting type. High resolution with a 0.3-mm-wide aperture. Be sure to read Safety Precautions on page 3. Ordering Information Photomicrosensor Sensing Connecting Aperture size (H W) Appearance Sensing distance Output type Model method method (mm) Emitter 1.4 1.4 4 Transmissive SMT Phototransistor EE-SX1320 2 mm (slot width) (slot type) 4 Detector 1 0.3 5.1 Ratings, Characteristics and Exterior Specifications Absolute Maximum Ratings (Ta = 25C) Electrical and Optical Characteristics (Ta = 25C) Item Symbol Rated value Unit Value Item Symbol Unit Condition Emitter MIN. TYP. MAX. Emitter Forward current IF 25 *1 mA Forward voltage VF --- 1.1 1.3 V IF = 5 mA Pulse forward current IFP 100*2 mA IR --- --- 10 AVR = 5 V Reverse current Reverse voltage VR 5V Peak emission Detector P --- 940 --- nm IF = 20 mA wavelength Collector-Emitter VCEO 12 V Detector voltage IF = 5 mA, Emitter-Collector Light current IL 150 --- 1500 A VECO 5V VCE = 5 V voltage VCE = 10 V, IC 20 mA Collector current Dark current ID --- 10 100 nA 0 lx PC 75 *1 mW Collector dissipation VCE IF = 20 mA, Collector-Emitter --- 0.1 0.4 V (sat) IL = 50 A Topr -30 to +85*1 C Operating temperature saturated voltage Tstg -40 to +90*1 C Peak spectral Storage temperature P --- 900 --- nm VCE = 5 V sensitivity Reflow soldering Tsol 255 *3 C wavelength temperature VCC = 5 V, *1. Refer to the temperature rating chart if the ambient temperature Rising time tr --- 19 --- s RL = 100 , exceeds 25C. IL = 500 A *2. Duty ratio: 1%, Pulse width: 0.1 ms VCC = 5 V, *3. Complete soldering within 10 seconds for reflow soldering. Falling time tf --- 26 --- s RL = 100 , IL = 500 A Exterior Specifications Note: Refer to the following timing diagram for tr and tf. Material I L Connecting method Weight (g) V Input cc Case Input 0 SMT 0.1 PPS t Output R L 90% Output 10% 0 t tr tf 1EE-SX1320 Engineering Data (Reference value) Fig 1. Forward Current vs. Collector Fig 2. Forward Current vs. Forward Fig 3. Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) 60 120 60 3,500 Ta = 25C Ta = 25C VCE = 5V 3,000 50 100 50 2,500 40 PC 80 40 2,000 30 60 30 IF 1,500 20 40 20 1,000 10 20 10 500 0 0 0 0 0 1020304050 -40 -20 0 20 40 60 80 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Forward voltage VF (V) Ambient temperature Ta (C) Forward current IF (mA) Fig 4. Light Current vs. Collector- Fig 5. Relative Light Current vs. Ambient Fig 6. Dark Current vs. Ambient Emitter Voltage Characteristics (Typical) Temperature Characteristics (Typical) Temperature Characteristics (Typical) 2,500 120 1,000 0 l x Ta = 25C IF = 5 mA VCE = 5 V 110 2,000 100 VCE = 10 V 100 1,500 IF = 10 mA 90 10 1,000 VCE = 2 V 80 1 IF = 5 mA 500 70 60 0.1 0 40 20 0 20 40 60 80 100 0 80 0 2 4 6 8 10 12 14 30 20 10 10 20 30 40 50 60 70 90 Ambient temperature Ta (C) Ambient temperature Ta (C) Collector-Emitter voltage VCE (V) Fig 7. Response Time vs. Load Fig 8. Sensing Position Characteristics Fig 9. Sensing Position Characteristics Resistance Characteristics (Typical) (Typical) (Typical) 10,000 120 120 IF = 5 mA IF = 5 mA VCC = 5 V VCE = 5 V VCE = 5 V IL =0.5 mA Ta = 25C Ta = 25C Ta = 25C 100 100 (Center of (Center of 1,000 optical axis) optical axis) 80 d 80 d tf 60 100 60 40 40 10 tr 20 20 0 0 1 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 -1.2 -0.9 -0.6 -0.3 0 0.3 0.6 0.9 1.2 0.1 1 10 100 Distance d (mm) Load resistance RL (k) Distance d (mm) 2 Response time tr, tf (s) Light current IL (A) Forward current IF (mA) Collector dissipation PC (mW) Relative light current IL (%) Forward current IF (mA) Relative light current IL (%) Dark current ID (nA) Light current IL (A) Relative light current IL (%)