Product Information

EE-SX1235A-P2

EE-SX1235A-P2 electronic component of Omron

Datasheet
Optical Switches, Transmissive, Phototransistor Output Transmissive Hi Res PCB .5mm Wide Aper

Manufacturer: Omron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

35: USD 2.9347 ea
Line Total: USD 102.71

4058 - Global Stock
Ships to you between
Wed. 15 May to Tue. 21 May
MOQ: 35  Multiples: 1
Pack Size: 1
Availability Price Quantity
4058 - WHS 1


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 35
Multiples : 1
35 : USD 3.0522
50 : USD 2.5072
100 : USD 2.4545
250 : USD 2.4041
500 : USD 2.356

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Output Device
Slot Width
Aperture Width
Collector- Emitter Voltage VCEO Max
Maximum Collector Current
Forward Current
Mounting Style
Maximum Operating Temperature
Minimum Operating Temperature
Series
Sensing Distance
Sensing Method
Wavelength
Brand
Power Dissipation
Fall Time
Rise Time
Factory Pack Quantity :
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Photomicrosensor (Transmissive) EE-SX1235A-P2 Be sure to read Precautions on page 25. Dimensions Features Snap-in mounting model. Note: All units are in millimeters unless otherwise indicated. Mounts to 1.0-, 1.2- and 1.6-mm-thick PCBs. Four, R0.5 High resolution with a 0.5-mm-wide aperture. Post header 292250-3 (Tyco Electronics AMP) 5-mm-wide slot. (3) A Connects to Tyco Electronics AMPs CT-series connectors. (2) K, E (1) C Absolute Maximum Ratings (Ta = 25C) 6 8.5 (11) 0.5 (Aperture width) 5 5 5 Item Symbol Rated value Optical Emitter Forward current I 50 mA F axis (see note) (see A A note) Pulse forward cur- I --- 0.8 FP 7.6 +1 0.3 rent 0.7 +0.15 6 3 0.2 0.1 Reverse voltage V 4 V +0.1 +0.1 R 5.8 0.2 3.5 0.2 +0.1 +0.1 7.3 5.8 0.2 0.2 Detector CollectorEmitter V 30 V CEO +0.1 7.3 0.2 voltage +0.1 (10) 17 0.15 EmitterCollector V 5 V ECO Internal Circuit voltage Note: The asterisked dimension is specified by datum A only. Collector current I 20 mA C Unless otherwise specified, the Collector dissipa- P 100 mW C tolerances are as shown below. tion (see note) Ambient tem- Operating Topr 25C to 95C Dimensions Tolerance perature Storage Tstg 40C to 100C 3 mm max. 0.3 Terminal No. Name Soldering temperature Tsol --- 3 < mm 6 0.375 A Anode Note: Refer to the temperature rating chart if the ambient tempera- 6 < mm 10 0.45 C Collector ture exceeds 25C. 10 < mm 18 0.55 K, E Cathode, 18 < mm 30 0.65 Emitter Recommended Mating Connectors: Tyco Electronics AMP 173977-3 (press-fit connector) 175778-3 (crimp connector) 179228-3 (crimp connector) Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wavelength 940 nm typ. I = 30 mA P F Detector Light current I 0.6 mA min., 14 mA max. I = 20 mA, V = 5 V L F CE Dark current I 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK CollectorEmitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.3 mA CE F L age Peak spectral sensitivity wave- 850 nm typ. V = 5 V P CE length Rising time tr 8 s typ. V = 5 V, R = 100 , I = 1 mA CC L L Falling time tf 8 s typ. V = 5 V, R = 100 , I = 1 mA CC L L 86 EE-SX1235A-P2 Photomicrosensor (Transmissive) 3.2 (Aperture width) 8.9 3.3 12.6 +0.1 8 1.1 0.05 7.6 0.2 5.6 4 +0.1 1.1 0.05 +0.1 1.3 0.05 +0.15 1.7 0.05 (5.8) (1.2) (4.6) (10.1) Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25C V = 10 V IF CE Ta = 30C PC Ta = 25C Ta = 70C Ambient temperature Ta (C) Forward voltage V (V) Forward current I (mA) F F Relative Light Current vs. Ambi- Light Current vs. CollectorEmitter Dark Current vs. Ambient ent Temperature Characteristics Voltage Characteristics (Typical) Temperature Characteristics (Typical) (Typical) Ta = 25C V = 10 V CE I = 20 mA F 0 lx V = 5 V CE I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F CollectorEmitter voltage V (V) CE Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics Sensing Position Characteristics Response Time vs. Load Resist- (Typical) (Typical) ance Characteristics (Typical) 120 V = 5 V CC I = 20 mA I = 20 mA F F Ta = 25C VCE = 10 V V = 10 V CE Ta = 25C 100 Ta = 25C (Center of optical axis) 80 d 60 40 20 0 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Load resistance R (k) L Distance d (mm) Response Time Measurement Circuit Input Output 10% 90% Input VCC Output GND Refer to EE-SX4235A-P2 on page 140. EE-SX1235A-P2 Photomicrosensor (Transmissive) 87 Response time tr, tf (s) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) Relative light current I (%) L L Forward current I (mA) F Dark current I (nA) D Relative light current I (%) Light current I (mA) L L (Center of optical axis)

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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