DATA SHEET www.onsemi.com Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS 1N5817, 1N5818, 1N5819 This series employs the Schottky Barrier principle in a large area metaltosilicon power diode. Stateoftheart geometry features AXIAL LEAD chrome barrier metal, epitaxial construction with oxide passivation CASE 59 and metal overlap contact. Ideally suited for use as rectifiers in STYLE 1 lowvoltage, highfrequency inverters, free wheeling diodes, and polarity protection diodes. Features Extremely Low V F MARKING DIAGRAM Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency These are PbFree Devices* Mechanical Characteristics: A Case: Epoxy, Molded 1N581x YYWW Weight: 0.4 Gram (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max for 10 Seconds A =Assembly Location Polarity: Cathode Indicated by Polarity Band 1N581x =Device Number x= 7, 8, or 9 ESD Ratings: Machine Model = C (>400 V) YY =Year Human Body Model = 3B (>8000 V) WW =Work Week =PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: August, 2021 Rev. 11 1N5817/D1N5817, 1N5818, 1N5819 MAXIMUM RATINGS Rating Symbol 1N5817 1N5818 1N5819 Unit Peak Repetitive Reverse Voltage V 20 30 40 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R NonRepetitive Peak Reverse Voltage V 24 36 48 V RSM RMS Reverse Voltage V 14 21 28 V R(RMS) Average Rectified Forward Current (Note 1), (V 0.2 V (dc), T = 90C, I 1.0 A R(equiv) R L O R = 80C/W, P.C. Board Mounting, see Note 2, T = 55C) JA A Ambient Temperature (Rated V (dc), P = 0, R = 80C/W) T 85 80 75 C R F(AV) JA A NonRepetitive Peak Surge Current, (Surge applied at rated load conditions, I 25 (for one cycle) A FSM halfwave, single phase 60 Hz, T = 70C) L Operating and Storage Junction Temperature Range (Reverse Voltage applied) T , T 65 to +125 C J stg Peak Operating Junction Temperature (Forward Current applied) T 150 C J(pk) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Note 1) Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient 80 C/W R JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Note 1) L Characteristic Symbol 1N5817 1N5818 1N5819 Unit Maximum Instantaneous Forward Voltage (Note 2) (i = 0.1 A) v 0.32 0.33 0.34 V F F (i = 1.0 A) 0.45 0.55 0.6 F (i = 3.0 A) 0.75 0.875 0.9 F Maximum Instantaneous Reverse Current Rated dc Voltage (Note 2) I mA R (T = 25C) 1.0 1.0 1.0 L (T = 100C) 10 10 10 L 1. Lead Temperature reference is cathode lead 1/32 in from case. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. www.onsemi.com 2