X-On Electronics has gained recognition as a prominent supplier of 1N6373RL4G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. 1N6373RL4G ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

1N6373RL4G ON Semiconductor

1N6373RL4G electronic component of ON Semiconductor
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Part No.1N6373RL4G
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ON Semiconductor TVS Diodes - Transient Voltage Suppressors 6.3V 1500W Unidirectional
Datasheet: 1N6373RL4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1500
Multiples : 1
1500 : USD 0.2405
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.7487
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.8038
10 : USD 0.8527
100 : USD 0.4632
500 : USD 0.3639
1000 : USD 0.2813
1500 : USD 0.2562
4500 : USD 0.2405
9000 : USD 0.2322
N/A

Obsolete
0
MOQ : 67
Multiples : 1
67 : USD 0.2266
200 : USD 0.2047
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
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Polarity
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
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Minimum Operating Temperature
Maximum Operating Temperature
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Operating Voltage
Peak Surge Current
Dimensions
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Peak Pulse Power Dissipation
Factory Pack Quantity :
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Pd - Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 1N6373RL4G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N6373RL4G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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TVS Diodes Axial > 1500W > 1N6373 - 1N6381 Series (ICTE-5 - ICTE-36) Pb 1N6373 - 1N6381 Series (ICTE-5 - ICTE-36) Description These devices are designed to protect voltage sensitive components from high voltage, high-energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are the Littelfuse exclusive, cost effective, highly reliable axial leaded package and are ideally suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect CMOS, MOS and Bipolar integrated circuits Features Working Peak Reverse Voltage Range - 5.0 V to 45 V Maximum Ratings and Thermal Characteristics Peak Power - 1500 Watts 1 ms ESD Rating of Class 3 (>16 KV) per Human Body Model Rating Symbol Value Unit Low Leakage < 5 A Above 10 V Response Time is Typically < 1 ns Peak Power Dissipation (Note 1) P 1500 W Bi-directional PK T 25C Pb-Free Packages are Available* L W 5.0 Steady State Power Dissipation P T 75C, Lead Length = 3/8 PK L 20 Functional Diagram mW/C Derated above T = 75C L Thermal Resistance, 20 C/W R Junction-to-Lead 8JL Cathode Anode Forward Surge Current (Note 2) I 200 A FSM TA = 25C Additional Information 65 to Operating and Storage T , T C/W Uni-directional J stg Temperature Range +175 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions Datasheet Resources Samples may affect device reliability. 1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25C per Figure 2. 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/14/17TVS Diodes Axial > 1500W > 1N6373 - 1N6381 Series (ICTE-5 - ICTE-36) I-V Curve Characteristics (TA = 25C unless otherwise noted, VF = 3.5 V Max. IF (Note 3) = 100 A) Symbol Parameter I I I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM I Maximum Reverse Leakage Current V V R RWM I I V Breakdown Voltage I BR T I Test Current T I Forward Current F I V Forward Voltage I F F Ratings and Characteristic Curves Figure 1. Pulse Rating Curve Figure 2. Pulse Derating Curve 100 NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 5 100 10 80 60 40 20 1 0 s s 1 ms 10 ms 02 55 07 51 00 1251 50 175 200 T , AMBIENT TEMPERATURE C( ) A t , PULSE WIDTH Figure 3. Capacitance versus Breakdown Voltage Figure 4. Steady State Power Derating 10,000 MEASURED ZERO BIAS 3/8 1000 3/8 5 MEASURED V RWM 4 100 3 2 1 10 0 11 01 00 1000 0 25 50 75 1001 25 1501 75 200 V , BREAKDOWN VOLTAGE (VOLTS) BR T , LEAD TEMPERATURE (C) L 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/14/17 C, CAPACITANCE (pF) P , PEAK POWER (kW) PK PEAK PULSE DERATING IN % OF P , STEADY STATE POWER DISSIPATION (WATTS) PEAK POWER OR CURRENT T = 25C D A

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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FAIRCHILD (ON SEMICONDUCTOR)
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FS8
FSC
ON
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ON SEMICONDUCTOR (FAIRCHILD)
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