Ordering number : ENN7261 2SC5831 NPN Epitaxial Planar Silicon Transistor 2SC5831 Driver Applications Preliminary Applications Package Dimensions Suitable for use in switching of inductive load unit : mm (motor drivers, printer hammer drivers, relay drivers). 2042B 2SC5831 8.0 4.0 Features 3.3 1.0 1.0 High DC current gain. Wide ASO. On-chip zener diode of 6510V between collector and 3.0 base. Uniformity in collector-to-base voltage. 1.6 Large inductive load handling capability. 0.8 0.8 0.75 0.7 1 : Emitter 1 2 3 2 : Collector 3 : Base 2.4 Specifications 4.8 SANYO : TO-126ML Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V *55 V CBO Collector-to-Emitter Voltage V *55 V CEO Emitter-to-Base Voltage V 6V EBO Collector Current I 2A C Collector Current (Pulse) I 4A CP 1.5 W Collector Dissipation P C Tc=25C10W Junction Temperature Tj 150 C Storage Temperature Tstg - 55 to +150 C *: On-chip zener diode(6510V) Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =40V, I =0 10 A CBO CB E Emitter Cutoff Current I V =5V, I =0 2 mA EBO EB C Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2502 TS IM TA-100102GI IMNo.7261-1/4 1.7 1.5 1.4 7.5 3.0 15.5 11.02SC5831 Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max DC Current Gain h V =5V, I =1A 1000 4000 FE CE C Gain-Bandwidth Product f V =5V, I =1A 180 MHz T CE C Inductive Load Es / b L=100mH, R =100 25 mJ BE Collector-to-Emitter Saturation Voltage V (sat) I =1A, I =4mA 1.0 1.5 V CE C B Base-to-Emitter Saturation Voltage V (sat) I =1A, I =4mA 2.0 V BE C B Collector-to-Base Breakdown Voltage V I =100A, I =0 55 65 75 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =1mA, R = 55 65 75 V (BR)CEO C BE Turn-ON Time t See specified Test Circuit. 0.2 s on Storage Time t See specified Test Circuit. 3.5 s stg Fall Time t See specified Test Circuit. 0.5 s f Switching Time Test Circuit Es / b Test Circuit PW=50s, Duty Cycle1% V =20V, R =100 OUTPUT CC BE I = --I =4mA B1 B2 L +V CC TUT TUT SW R INPUT B R L V R I 20 B 50 R BE 10k 300 ++ 100F 470F V = --5V V =20V BB CC I =250A, I = --250A, I =1A C B1 B2 I -- V I -- V C CE C BE 2.0 2.4 V =5V CE 2.0 1.6 1.6 1.2 1.2 0.8 0.8 0.4 0.4 I =0 B 0 0 01243 5 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 Collector-to-Emitter Voltage, V -- V ITR06005 Base-to-Emitter Voltage, V -- V ITR06006 CE BE h -- I Cob -- V FE C CB 1000 3 V =5V f=1MHz CE 2 7 5 10000 7 3 5 2 3 2 100 1000 7 7 5 5 3 3 2 2 100 7 5 10 357235 7 23 5 23 5 7 23 5 7 23 5 0.1 1.0 0.1 1.0 10 Collector Current, I -- A ITR06007 Collector-to-Base Voltage, V -- V ITR06008 C CB No.7261-2/4 150A 200A 250A 300A 1000A 450A 400A 350A --40C 500A 25C Ta=120C 1500A 2000A Ta=120C 25C --40C DC Current Gain, h Collector Current, I -- A FE C Output Capacitance, Cob -- pF Collector Current, I -- A C