X-On Electronics has gained recognition as a prominent supplier of 55GN01FA-TL-H RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. 55GN01FA-TL-H RF Bipolar Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

55GN01FA-TL-H ON Semiconductor

55GN01FA-TL-H electronic component of ON Semiconductor
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Part No.55GN01FA-TL-H
Manufacturer: ON Semiconductor
Category: RF Bipolar Transistors
Description: Trans GP BJT NPN 10V 0.07A 3-Pin SSFP T/R
Datasheet: 55GN01FA-TL-H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8000: USD 0.0892 ea
Line Total: USD 713.6 
Availability - 0
MOQ: 8000  Multiples: 8000
Pack Size: 8000
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3053
Multiples : 3053
3053 : USD 0.1378

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 5
Multiples : 5
5 : USD 0.3447
25 : USD 0.2511
85 : USD 0.1886
230 : USD 0.1791

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 8000
Multiples : 8000
8000 : USD 0.0892

   
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We are delighted to provide the 55GN01FA-TL-H from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 55GN01FA-TL-H and other electronic components in the RF Bipolar Transistors category and beyond.

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LOT No. LOT No. Ordering number : ENA1113A 55GN01FA RF Transistor 55GN01FA Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =10V, I =0A 0.1 A CBO CB E Emitter Cutoff Current I V =2V, I =0A 1 A EBO EB C DC Current Gain h V =5V, I =10mA 100 160 FE CE C f1V =3V, I =5mA 3.0 4.5 GHz T CE C Gain-Bandwidth Product f2V =5V, I =20mA 5.5 GHz T CE C Output Capacitance Cob 0.95 1.2 pF V =10V, f=1MHz CB Reverse Transfer Capacitance Cre 0.6 pF 2 S21e1V =5V, I =20mA, f=1GHz 8 11 dB CE C Forward Transfer Gain 2 S21e2V =5V, I =20mA, f=400MHz 16 19 dB CE C Noise Figure NF V =3V, I =5mA, f=1GHz, Z =Z =50 1.9 dB CE C S L Ordering Information Device Package Shipping memo 55GN01FA-TL-H SSFP 8,000pcs./reel Pb Free and Halogen Free I -- V I -- V C CE C BE 50 80 V =5V CE 45 70 40 60 35 50 30 25 40 20 30 15 20 10 10 5 I =0mA B 0 0 0123456789 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, V -- V IT06252 Base-to-Emitter Voltage, V -- V IT06253 CE BE h -- I f -- I FE C T C 3 10 V =5V V =5V CE CE 7 2 5 3 100 2 7 5 1.0 23 5 7 2 3 5 7 357 2 3 57 23 5 7 1.0 10 100 1.0 10 100 Collector Current, I -- mA IT06254 Collector Current, I -- mA IT07319 C C No. A1113-2/9 0.20mA 0.15mA 0.10mA 0.05mA 0.25mA 0.30mA DC Current Gain, h Collector Current, I -- mA FE C Gain-Bandwidth Product, f -- GHz Collector Current, I -- mA T C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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