Ordering number : EN6559C
5LN01SP
N-Channel Small Signal MOSFET
5LN01SP
Electrical Characteristics at Ta=25C
Value
Parameter Symbol Conditions Unit
min typ max
Drain to Source Breakdown Voltage V I =1mA, V =0V 50 V
(BR)DSS D GS
Zero-Gate Voltage Drain Current I V =50V, V =0V 10 A
DSS DS GS
Gate to Source Leakage Current I V =8V, V =0V 10 A
GSS GS DS
Gate Threshold Voltage V (th) V =10V, I =100A 0.4 1.3 V
GS DS D
g
Forward Transconductance V =10V, I =50mA 0.13 0.18 S
FS DS D
R (on)1 I =50mA, V =4V 6 7.8
DS D GS
Static Drain to Source On-State Resistance R (on)2 I =30mA, V =2.5V 7.1 9.9
DS D GS
R (on)3 I =10mA, V =1.5V 10 20
DS D GS
Input Capacitance
Ciss 6.6 pF
Output Capacitance Coss V =10V, f=1MHz 4.7 pF
DS
Reverse Transfer Capacitance
Crss 1.7 pF
Turn-ON Delay Time
t (on) 18 ns
d
Rise Time t 42 ns
r
See specified Test Circuit.
Turn-OFF Delay Time
t (off) 190 ns
d
Fall Time
t 105 ns
f
Total Gate Charge Qg 1.57 nC
Gate to Source Charge
Qgs V =10V, V =10V, I =100mA 0.20 nC
DS GS D
Gate to Drain Miller Charge
Qgd 0.32 nC
Forward Diode Voltage V I =100mA, V =0V 0.85 1.2 V
SD S GS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
V =25V
DD
V
IN
4V
0V I =50mA
D
V
IN R =494
L
PW=10s
D
V
OUT
D.C.1%
G
5LN01SP
P.G
50
S
No.6559-2/6