PD - 95758A
IRF3305PbF
Features
HEXFET Power MOSFET
D
V = 55V
DSS
!
#
R = 8.0m
DS(on)
$ #
G
!$
I = 75A
D
S
Description
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TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
Continuous Drain Current, V @ 10V (Silicon Limited)
I @ T = 25C GS 140
D C
I @ T = 100C Continuous Drain Current, V @ 10V
GS 99 A
D C
Continuous Drain Current, V @ 10V (Package Limited)
I @ T = 25C 75
GS
D C
Pulsed Drain Current
I 560
DM
P @T = 25C Power Dissipation 330 W
D C
Linear Derating Factor 2.2 W/C
V Gate-to-Source Voltage 20 V
GS
Single Pulse Avalanche Energy
E 470 mJ
AS (Thermally limited)
Single Pulse Avalanche Energy Tested Value
E (Tested ) 860
AS
Avalanche Current
I See Fig.12a, 12b, 15, 16 A
AR
Repetitive Avalanche Energy
E mJ
AR
T Operating Junction and -55 to + 175
J
T Storage Temperature Range C
STG
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m)
Thermal Resistance
Parameter Typ. Max. Units
Junction-to-Case
R 0.45
JC
R Case-to-Sink, Flat, Greased Surface 0.50 C/W
CS
Junction-to-Ambient
R 62
JA
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Electrical Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A
(BR)DSS GS D
V / T Breakdown Voltage Temp. Coefficient 0.055 V/C Reference to 25C, I = 1mA
(BR)DSS J D
R Static Drain-to-Source On-Resistance 8.0 m V = 10V, I = 75A
DS(on) GS D
V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A
GS(th) DS GS D
gfs Forward Transconductance 41 S V = 25V, I = 75A
DS D
I Drain-to-Source Leakage Current 25 A V = 55V, V = 0V
DSS DS GS
250 V = 55V, V = 0V, T = 125C
DS GS J
I Gate-to-Source Forward Leakage 200 nA V = 20V
GSS GS
Gate-to-Source Reverse Leakage -200 V = -20V
GS
Q Total Gate Charge 100 150 I = 75A
g D
Q Gate-to-Source Charge 21 nC V = 44V
gs DS
Q Gate-to-Drain Mille) Charge 45 V = 10V
gd GS
t Turn-On Delay Time 16 V = 28V
d(on) DD
t Rise Time 88 I = 75A
r D
t Turn-Off Delay Time 43 ns R = 2.6
d(off) G
t Fall Time 34 V = 10V
f GS
L Internal Drain Inductance 4.5 Between lead,
D
nH 6mm (0.25in.)
L Internal Source Inductance 7.5 from package
S
and center of die contact
C Input Capacitance 3650 V = 0V
iss GS
C Output Capacitance 1230 V = 25V
oss DS
C Reverse Transfer Capacitance 450 pF = 1.0MHz
rss
C Output Capacitance 4720 V = 0V, V = 1.0V, = 1.0MHz
oss GS DS
C Output Capacitance 930 V = 0V, V = 44V, = 1.0MHz
oss GS DS
C eff. Effective Output Capacitance 1490 V = 0V, V = 0V to 44V
oss GS DS
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I Continuous Source Current 75 MOSFET symbol
S
(Body Diode) A showing the
I Pulsed Source Current 560 integral reverse
SM
(Body Diode)
p-n junction diode.
V Diode Forward Voltage1.3V T = 25C, I = 75A, V = 0V
SD
J S GS
t Reverse Recovery Time 5786ns T = 25C, I = 75A, V = 28V
rr J F DD
di/dt = 100A/s
Q Reverse Recovery Charge 130 190 nC
rr
t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Repetitive rating; pulse width limited by C eff. is a fixed capacitance that gives the same charging time
oss
max. junction temperature. (See fig. 11).
as C while V is rising from 0 to 80% V .
oss DS DSS
Limited by T , starting T = 25C, L = 0.17mH
Jmax J Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive
Jmax
R = 25 , I = 75A, V =10V. Part not
G AS GS avalanche performance.
recommended for use above this value.
This value determined from sample failure population. 100%
Pulse width 1.0ms; duty cycle 2%.
tested to this value in production.
C eff. is a fixed capacitance that gives the
oss
R is measured at T of approximately 90C.
J
same charging time as C while V is rising
oss DS
from 0 to 80% V .
DSS
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