BAS116TT1G ON Semiconductor

BAS116TT1G Switching Diode Features Low Leakage Current Applications Medium Speed Switching Times BAS116TT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I = 100 Adc) V 75 Vdc BR (BR) Reverse Voltage Leakage Current (V = 75 Vdc) I 5.0 nAdc R R Reverse Voltage Leakage Current (V = 75 Vdc, T = 150C) 80 R J Forward Voltage (I = 1.0 mAdc) V 900 mV F F Forward Voltage (I = 10 mAdc) 1000 F Forward Voltage (I = 50 mAdc) 1100 F Forward Voltage (I = 150 mAdc) 1250 F Diode Capacitance (V = 0 V, f = 1.0 MHz) C 2.0 pF R D Reverse Recovery Time (I = I = 10 mAdc) (Figure 1) t 3.0 s F R rr 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% DUT i = 1.0 mA R(REC) 50 Output 50 INPUT I R Pulse SAMPLING V R OUTPUT PULSE Generator OSCILLOSCOPE INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit TYPICAL CHARACTERISTICS 1,000 1.2 T = 25C A 1.0 100 0.8 150C 25C 55C 10 0.6 0.4 1 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 60 70 80 V , FORWARD VOLTAGE (V) V , REVERSE VOLTAGE (V) F R Figure 2. Forward Voltage Figure 3. Capacitance