X-On Electronics has gained recognition as a prominent supplier of BAS16LT3G Small Signal Switching Diodes across the USA, India, Europe, Australia, and various other global locations. BAS16LT3G Small Signal Switching Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Small Signal Switching Diodes, ensuring timely deliveries around the world.

BAS16LT3G ON Semiconductor

BAS16LT3G electronic component of ON Semiconductor
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Part No.BAS16LT3G
Manufacturer: ON Semiconductor
Category: Small Signal Switching Diodes
Description: Small Signal Switching Diodes 75V 200mA
Datasheet: BAS16LT3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10000: USD 0.0112 ea
Line Total: USD 112 
Availability - 97000
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 10000  Multiples: 10000
Pack Size: 10000
Availability Price Quantity
97000
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 10000
Multiples : 10000
10000 : USD 0.0112
30000 : USD 0.0105
50000 : USD 0.0103
100000 : USD 0.0101
150000 : USD 0.0099
250000 : USD 0.0095
500000 : USD 0.0094
1000000 : USD 0.0093

5778
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.0715
10 : USD 0.0314
100 : USD 0.016
1000 : USD 0.0127
2500 : USD 0.0109
10000 : USD 0.0099

9700
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 10000
Multiples : 10000
10000 : USD 0.014
20000 : USD 0.0132
50000 : USD 0.0101

553
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.0732
10 : USD 0.073
25 : USD 0.0728
100 : USD 0.0725
250 : USD 0.0724
500 : USD 0.0723

4538
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 20
Multiples : 20
20 : USD 0.0248
200 : USD 0.0195
600 : USD 0.0164
2000 : USD 0.0152
10000 : USD 0.0134

   
Manufacturer
Product Category
Product
Mounting Style
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Package / Case
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BAS16LT3G from our Small Signal Switching Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAS16LT3G and other electronic components in the Small Signal Switching Diodes category and beyond.

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Switching Diode BAS16L Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable www.onsemi.com These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 3 1 MAXIMUM RATINGS CATHODE ANODE Rating Symbol Value Unit Continuous Reverse Voltage V 100 V R Peak Forward Current I 200 mA F 3 MARKING NonRepetitive Peak Forward Surge I 1.8 A FSM(surge) DIAGRAM Current 60 Hz 1 Repetitive Peak Forward Current I 1.0 A 2 FRM (Note 3) A6 M SOT23 CASE 318 NonRepetitive Peak Forward Current I A FSM (Square Wave, T = 25C prior to STYLE 8 1 J surge) t = 1 s 36.0 t = 10 s 18.0 A6 = Specific Device Code t = 100 s 6.0 M = Date Code* 3.0 t = 1 ms = PbFree Package 1.8 t = 10 ms 1.3 (Note: Microdot may be in either location) t = 100 ms t = 1 s 1.0 *Date Code orientation and/or overbar may vary depending upon manufacturing location. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS ORDERING INFORMATION Characteristic Symbol Max Unit Device Package Shipping Total Device Dissipation FR5 Board P D BAS16LT1G SOT23 3000/Tape & Reel (Note 1) 225 mW (PbFree) T = 25C A Derate above 25C 1.8 mW/C BAS16LT3G SOT23 10000/Tape & Reel (PbFree) Thermal Resistance, JunctiontoAmbient R 556 C/W JA SBAS16LT1G SOT23 3000/Tape & Reel (PbFree) Total Device Dissipation P D Alumina Substrate, (Note 2) 300 mW SBAS16LT3G SOT23 10000/Tape & Reel T = 25C A (PbFree) Derate above 25C 2.4 mW/C For information on tape and reel specifications, Thermal Resistance, including part orientation and tape sizes, please JunctiontoAmbient R 417 C/W JA refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Junction and Storage Temperature T , T 55 to +150 C J stg 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Square Wave, f = 40 kHz, PW = 200 ns Test Duration = 60 s, T = 25C prior to surge. J Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: February, 2020 Rev. 14 BAS16LT1/DBAS16L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current I Adc R (V = 100 V) 1.0 R (V = 75 Vdc, T = 150C) 50 R J (V = 25 Vdc, T = 150C) 30 R J Reverse Breakdown Voltage V 100 Vdc (BR) (I = 100 Adc) BR Forward Voltage V mV F (I = 1.0 mAdc) 715 F (I = 10 mAdc) 855 F (I = 50 mAdc) 1000 F (I = 150 mAdc) 1250 F Diode Capacitance C 2.0 pF D (V = 0, f = 1.0 MHz) R Forward Recovery Voltage V 1.75 Vdc FR (I = 10 mAdc, t = 20 ns) F r Reverse Recovery Time t 6.0 ns rr (I = I = 10 mAdc, R = 50 ) F R L Stored Charge Q 45 pC S (I = 10 mAdc to V = 5.0 Vdc, R = 500 ) F R L Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% D.U.T. i = 1.0 mA R(REC) 50 OUTPUT 50 INPUT I R PULSE SAMPLING V R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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