BAS16XV2 Switching Diode Features HighSpeed Switching Applications Lead Finish: 100% Matte Sn (Tin) Qualified Reflow Temperature: 260C www.onsemi.com Extremely Small SOD523 Package S Prefix for Automotive and Other Applications Requiring Unique 1 2 Site and Control Change Requirements AECQ101 Qualified and CATHODE ANODE PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 2 MARKING DIAGRAM 1 MAXIMUM RATINGS Rating Symbol Value Unit SOD523 A6 M CASE 502 Continuous Reverse Voltage V 100 V R 12 Continuous Forward Current I 200 mA F A6 = Specific Device Code Peak Forward Surge Current I 500 mA FM(surge) M = Date Code = PbFree Package Repetitive Peak Forward Current I 500 mA FRM (Pulse Wave = 1 sec, Duty Cycle = 66%) (Note: Microdot may be in either location) NonRepetitive Peak Forward Current I A FSM (Square Wave, T = 25C prior to surge) J ORDERING INFORMATION t = 1 s 4.0 t = 1 ms 1.0 Device Package Shipping t = 1 s 0.5 Stresses exceeding those listed in the Maximum Ratings table may damage the BAS16XV2T1G SOD523 3000 / Tape & Reel device. If any of these limits are exceeded, device functionality should not be (PbFree) assumed, damage may occur and reliability may be affected. BAS16XV2T5G SOD523 8000 / Tape & Reel (PbFree) THERMAL CHARACTERISTICS SBAS16XV2T1G SOD523 3000 /T ape & Reel Characteristic Symbol Max Unit (PbFree) Total Device Dissipation, (Note 1) P 200 mW D SBAS16XV2T5G SOD523 8000 / Tape & Reel T = 25C A (PbFree) Derate above 25C 1.57 mW/C For information on tape and reel specifications, Thermal Resistance, JunctiontoAmbient R 635 C/W JA including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Junction and Storage Temperature T , T 55 to 150 C J stg Brochure, BRD8011/D. 1. FR-5 Minimum Pad. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: August, 2018 Rev. 9 BAS16XV2T1/DBAS16XV2 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current I A R (V = 100 V) 1.0 R (V = 75 V, T = 150C) 50 R J (V = 25 V, T = 150C) 30 R J Reverse Breakdown Voltage V 100 V (BR) (I = 100 A) BR Forward Voltage V mV F (I = 1.0 mA) 715 F (I = 10 mA) 855 F (I = 50 mA) 1000 F (I = 150 mA) 1250 F Diode Capacitance (V = 0, f = 1.0 MHz) C 2.0 pF R D Forward Recovery Voltage V 1.75 V FR (I = 10 mA, t = 20 ns) F r Reverse Recovery Time t 6.0 ns rr (I = I = 10 mA, R = 50 ) F R L Stored Charge Q 45 pC S (I = 10mA to V = 5.0V, R = 500 ) F R L 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% D.U.T. i = 1.0 mA R(REC) 50 OUTPUT 50 INPUT I R PULSE SAMPLING V R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2