BAS20LT1 ON Semiconductor

BAS19L, BAS20L, BAS21L, BAS21DW5 High Voltage Switching Diode Features www.onsemi.com These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant S and NSV Prefixes for Automotive and Other Applications HIGH VOLTAGE Requiring Unique Site and Control Change Requirements SWITCHING DIODE AECQ101 Qualified and PPAP Capable SOT23 MAXIMUM RATINGS 3 1 Rating Symbol Value Unit CATHODE ANODE Continuous Reverse Voltage V Vdc R 120 BAS19 SC88A 200 BAS20 5 1 250 BAS21 CATHODE ANODE Repetitive Peak Reverse Voltage V Vdc 4 3 RRM 120 BAS19 CATHODE ANODE 200 BAS20 250 BAS21 MARKING DIAGRAMS Continuous Forward Current I 200 mAdc F 3 Peak Forward Surge Current I 2 A FSM 3 (1/2 Cycle, Sine Wave, 60 Hz) 1 Jx M Repetitive Peak Forward Current I 0.6 A FRM 2 (Pulse Train: T = 1 s, T = 0.5 s) ON OFF 1 2 SOT23 (TO236) Junction and Storage Temperature T , T 55 to +150 C J stg CASE 318 Range STYLE 8 Power Dissipation (Note 1) P 385 mW D 5 4 Electrostatic Discharge ESD HM < 500 V Jx M MM < 400 V 3 1 Stresses exceeding those listed in the Maximum Ratings table may damage the 1 2 3 device. If any of these limits are exceeded, device functionality should not be SC88A (SOT353) assumed, damage may occur and reliability may be affected. CASE 419A 1. Mounted on FR5 Board = 1.0 x 0.75 x 0.062 in. x = P, R, or S P = BAS19L R = BAS20L S = BAS21L or BAS21DW5 M = Date Code = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon the manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Semiconductor Components Industries, LLC, 1999 1 Publication Order Number: November, 2016 Rev. 18 BAS19LT1/DBAS19L, BAS20L, BAS21L, BAS21DW5 THERMAL CHARACTERISTICS (SOT23) Characteristic Symbol Max Unit Total Device Dissipation FR5 Board P 225 mW D (Note 2) T = 25C A 1.8 mW/C Derate above 25C Thermal Resistance R JA 556 C/W JunctiontoAmbient (SOT23) Total Device Dissipation Alumina Substrate P 300 mW D (Note 3) T = 25C A 2.4 mW/C Derate above 25C Thermal Resistance JunctiontoAmbient R 417 C/W JA Junction and Storage T , T J stg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS (SC88A) Characteristic Symbol Max Unit Power Dissipation (Note 4) P 385 mW D Thermal Resistance R JA JunctiontoAmbient 328 C/W Derate Above 25C 3.0 mW/C Maximum Junction Temperature T 150 C Jmax Operating Junction and Storage Temperature Range T , T 55 to +150 C J stg 2. FR5 = 1.0 0.75 0.062 in. 3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 4. Mounted on FR5 Board = 1.0 x 0.75 x 0.062 in. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit Reverse Voltage Leakage Current I Adc R (V = 100 Vdc) BAS19 0.1 R (V = 150 Vdc) BAS20 0.1 R (V = 200 Vdc) BAS21 0.1 R (V = 100 Vdc, T = 150C) BAS19 100 R J (V = 150 Vdc, T = 150C) BAS20 100 R J (V = 200 Vdc, T = 150C) BAS21 100 R J Reverse Breakdown Voltage V Vdc (BR) 120 (I = 100 Adc) BAS19 BR 200 (I = 100 Adc) BAS20 BR 250 (I = 100 Adc) BAS21 BR Forward Voltage V Vdc F (I = 100 mAdc) 1.0 F (I = 200 mAdc) 1.25 F Diode Capacitance (V = 0, f = 1.0 MHz) C 5.0 pF R D Reverse Recovery Time (I = I = 30 mAdc, I = 3.0 mAdc, R = 100) t 50 ns F R R(REC) L rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2