X-On Electronics has gained recognition as a prominent supplier of BAS20LT1 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. BAS20LT1 Diodes - General Purpose, Power, Switching are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

BAS20LT1 ON Semiconductor

BAS20LT1 electronic component of ON Semiconductor
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Part No.BAS20LT1
Manufacturer: ON Semiconductor
Category: Diodes - General Purpose, Power, Switching
Description: Diode Small Signal Switching 200V 0.2A 3-Pin SOT-23 T/R
Datasheet: BAS20LT1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
13889: USD 0.0376 ea
Line Total: USD 522.23 
Availability - 0
MOQ: 13889  Multiples: 13889
Pack Size: 13889
Availability Price Quantity
37597
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ : 5
Multiples : 1
5 : USD 3.4913
10 : USD 3.255
25 : USD 2.9531
50 : USD 2.7431
100 : USD 2.4281
250 : USD 2.0738
500 : USD 1.8768
1000 : USD 1.5356

   
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RoHS - XON
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We are delighted to provide the BAS20LT1 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAS20LT1 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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BAS19L, BAS20L, BAS21L, BAS21DW5 High Voltage Switching Diode Features www.onsemi.com These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant S and NSV Prefixes for Automotive and Other Applications HIGH VOLTAGE Requiring Unique Site and Control Change Requirements SWITCHING DIODE AECQ101 Qualified and PPAP Capable SOT23 MAXIMUM RATINGS 3 1 Rating Symbol Value Unit CATHODE ANODE Continuous Reverse Voltage V Vdc R 120 BAS19 SC88A 200 BAS20 5 1 250 BAS21 CATHODE ANODE Repetitive Peak Reverse Voltage V Vdc 4 3 RRM 120 BAS19 CATHODE ANODE 200 BAS20 250 BAS21 MARKING DIAGRAMS Continuous Forward Current I 200 mAdc F 3 Peak Forward Surge Current I 2 A FSM 3 (1/2 Cycle, Sine Wave, 60 Hz) 1 Jx M Repetitive Peak Forward Current I 0.6 A FRM 2 (Pulse Train: T = 1 s, T = 0.5 s) ON OFF 1 2 SOT23 (TO236) Junction and Storage Temperature T , T 55 to +150 C J stg CASE 318 Range STYLE 8 Power Dissipation (Note 1) P 385 mW D 5 4 Electrostatic Discharge ESD HM < 500 V Jx M MM < 400 V 3 1 Stresses exceeding those listed in the Maximum Ratings table may damage the 1 2 3 device. If any of these limits are exceeded, device functionality should not be SC88A (SOT353) assumed, damage may occur and reliability may be affected. CASE 419A 1. Mounted on FR5 Board = 1.0 x 0.75 x 0.062 in. x = P, R, or S P = BAS19L R = BAS20L S = BAS21L or BAS21DW5 M = Date Code = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon the manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Semiconductor Components Industries, LLC, 1999 1 Publication Order Number: November, 2016 Rev. 18 BAS19LT1/DBAS19L, BAS20L, BAS21L, BAS21DW5 THERMAL CHARACTERISTICS (SOT23) Characteristic Symbol Max Unit Total Device Dissipation FR5 Board P 225 mW D (Note 2) T = 25C A 1.8 mW/C Derate above 25C Thermal Resistance R JA 556 C/W JunctiontoAmbient (SOT23) Total Device Dissipation Alumina Substrate P 300 mW D (Note 3) T = 25C A 2.4 mW/C Derate above 25C Thermal Resistance JunctiontoAmbient R 417 C/W JA Junction and Storage T , T J stg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS (SC88A) Characteristic Symbol Max Unit Power Dissipation (Note 4) P 385 mW D Thermal Resistance R JA JunctiontoAmbient 328 C/W Derate Above 25C 3.0 mW/C Maximum Junction Temperature T 150 C Jmax Operating Junction and Storage Temperature Range T , T 55 to +150 C J stg 2. FR5 = 1.0 0.75 0.062 in. 3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 4. Mounted on FR5 Board = 1.0 x 0.75 x 0.062 in. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit Reverse Voltage Leakage Current I Adc R (V = 100 Vdc) BAS19 0.1 R (V = 150 Vdc) BAS20 0.1 R (V = 200 Vdc) BAS21 0.1 R (V = 100 Vdc, T = 150C) BAS19 100 R J (V = 150 Vdc, T = 150C) BAS20 100 R J (V = 200 Vdc, T = 150C) BAS21 100 R J Reverse Breakdown Voltage V Vdc (BR) 120 (I = 100 Adc) BAS19 BR 200 (I = 100 Adc) BAS20 BR 250 (I = 100 Adc) BAS21 BR Forward Voltage V Vdc F (I = 100 mAdc) 1.0 F (I = 200 mAdc) 1.25 F Diode Capacitance (V = 0, f = 1.0 MHz) C 5.0 pF R D Reverse Recovery Time (I = I = 30 mAdc, I = 3.0 mAdc, R = 100) t 50 ns F R R(REC) L rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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