BAV199LT1G ON Semiconductor

BAV199L, SBAV199L Dual Series Switching Diode Features Low Leakage Current Applications www.onsemi.com Medium Speed Switching Times S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant CASE 318 SOT23 STYLE 11 MAXIMUM RATINGS Rating Symbol Value Unit ANODE CATHODE Reverse Voltage V 70 Vdc R 1 2 Forward Current I 215 mAdc F 3 Peak Forward Surge Current I 500 mAdc FM(surge) CATHODE/ANODE Repetitive Peak Reverse Voltage V 70 Vdc RRM Average Rectified Forward Current I 715 mAdc MARKING DIAGRAM F(AV) (Note 1) (Averaged Over Any 20 ms Period) Repetitive Peak Forward Current I 450 mAdc FRM JY M NonRepetitive Peak Forward Current I Adc FSM t = 1.0 s 2.0 t = 1.0 ms 1.0 t = 1.0 s 0.5 JY = Specific Device Code THERMAL CHARACTERISTICS M = Date Code* = PbFree Package Characteristic Symbol Max Unit (Note: Microdot may be in either location) Total Device Dissipation P D FR5 Board (Note 1), T = 25C 225 mW *Date Code orientation and/or overbar may A Derate above 25C 1.8 mW/C vary depending upon manufacturing location. Thermal Resistance, JunctiontoAmbient R 556 C/W JA ORDERING INFORMATION Total Device Dissipation P D Alumina Substrate (Note 2), T = 25C 300 mW A Device Package Shipping Derate above 25C 2.4 mW/C BAV199LT1G SOT23 3,000 / Thermal Resistance, JunctiontoAmbient R 417 C/W JA (PbFree) Tape & Reel Junction and Storage Temperature T , T 65 to +150 C J stg SBAV199LT1G SOT23 3,000 / Stresses exceeding those listed in the Maximum Ratings table may damage the (PbFree) Tape & Reel device. If any of these limits are exceeded, device functionality should not be SBAV199LT3G SOT23 10,000 / assumed, damage may occur and reliability may be affected. (PbFree) Tape & Reel 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 10 BAV199LT1/DBAV199L, SBAV199L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (EACH DIODE) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage V Vdc (BR) (I = 100 Adc) 70 (BR) Reverse Voltage Leakage Current I nAdc R (V = 70 Vdc) 5.0 R (V = 70 Vdc, T = 150C) 80 R J Diode Capacitance C pF D (V = 0 V, f = 1.0 MHz) 2.0 R Forward Voltage V mVdc F (I = 1.0 mAdc) 900 F (I = 10 mAdc) 1000 F (I = 50 mAdc) 1100 F (I = 150 mAdc) 1250 F Reverse Recovery Time t s rr (I = I = 10 mAdc) (Figure 1) 3.0 F R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% DUT i = 1.0 mA R(REC) 50 OUTPUT 50 INPUT I R SAMPLING V PULSE R OUTPUT PULSE OSCILLOSCOPE GENERATOR INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2