Switching Diode BAS16P2T5G The BAS16P2T5G Switching Diode is a spinoff of our popular SOT23 threeleaded device. It is designed for switching applications and is housed in the SOD923 surface mount package. This device is ideal for lowpower surface mount applications, where board space is at a premium. www.onsemi.com Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1 2 CATHODE ANODE Compliant MAXIMUM RATINGS MARKING Rating Symbol Value Unit 2 DIAGRAM Continuous Reverse Voltage V 100 Vdc R 1 Peak Forward Current I 200 mAdc F A6M SOD923 Peak Forward Surge Current I 500 mAdc FM(surge) CASE 514AB 12 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be A6 = Specific Device Code assumed, damage may occur and reliability may be affected. M = Month Code THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, ORDERING INFORMATION JunctiontoAmbient (Note 1) R 520 C/W JA Total Power Dissipation P 240 mW D Device Package Shipping T = 25C A BAS16P2T5G SOD923 8000 / Tape & Reel Thermal Resistance, (PbFree) JunctiontoAmbient (Note 2) 175 C/W R JA Total Power Dissipation 710 mW For information on tape and reel specifications, P D including part orientation and tape sizes, please T = 25C A refer to our Tape and Reel Packaging Specifications Junction and Storage T , T 55 to C J stg Brochure, BRD8011/D. Temperature Range +150 1. Mounted onto a 4 in square FR4 board 10 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR4 board 1 in sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: October, 2020 Rev. 2 BAS16P2/DBAS16P2T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current I Adc R (V = 75 Vdc) 1.0 R (V = 100 Vdc) 100 R (V = 75 Vdc, T = 150C) 50 R J (V = 25 Vdc, T = 150C) 30 R J Reverse Breakdown Voltage V 100 Vdc (BR) (I = 100 Adc) BR Forward Voltage V mV F (I = 1.0 mAdc) 715 F (I = 10 mAdc) 855 F (I = 50 mAdc) 1000 F (I = 150 mAdc) 1250 F Diode Capacitance C 2.0 pF D (V = 0, f = 1.0 MHz) R Forward Recovery Voltage V 1.75 Vdc FR (I = 10 mAdc, t = 20 ns) F r Reverse Recovery Time t 6.0 ns rr (I = I = 10 mAdc, R = 50 ) F R L Stored Charge Q 45 pC S (I = 10 mAdc to V = 5.0 Vdc, F R R = 500 ) L Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2