X-On Electronics has gained recognition as a prominent supplier of BDX54ATU Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. BDX54ATU Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

BDX54ATU ON Semiconductor

BDX54ATU electronic component of ON Semiconductor
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See Product Specifications
Part No.BDX54ATU
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: Trans Darlington PNP 60V 8A 3-Pin(3+Tab) TO-220 Rail
Datasheet: BDX54ATU Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
160: USD 0.1632 ea
Line Total: USD 26.11 
Availability - 0
MOQ: 160  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ : 160
Multiples : 1
160 : USD 0.1632

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Collector- Base Voltage Vcbo
Emitter- Base Voltage Vebo
Brand
Maximum Collector Cut-Off Current
Maximum Dc Collector Current
Pd - Power Dissipation
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BDX54ATU from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BDX54ATU and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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BDX54/A/B/C BDX54/A/B/C Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications Power Darlington TR Complement to BDX53, BDX53A, BDX53B and BDX53C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage : BDX54 - 45 V CBO : BDX54A - 60 V : BDX54B - 80 V : BDX54C - 100 V V Collector-Emitter Voltage : BDX54 - 45 V CEO : BDX54A - 60 V : BDX54B - 80 V : BDX54C - 100 V V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 8 A C I *Collector Current (Pulse) - 12 A CP I Base Current - 0.2 A B P Collector Dissipation (T =25C) 60 W C C T Junction Temperature 150 C J T Storage Temperature - 65 ~ 150 C STG Electrical Characteristics T =25C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) * Collector-Emitter Sustaining Voltage CEO : BDX54 I = - 100mA, I = 0 - 45 V C B : BDX54A - 60 V : BDX54B - 80 V : BDX54C - 100 V I Collector Cut-off Current : BDX54 V = - 45V, I = 0 - 200 A CBO CB E : BDX54A V = - 60V, I = 0 - 200 A CB E : BDX54B V = - 80V, I = 0 - 200 A CB E : BDX54C V = - 100V, I = 0 - 200 A CB E I Collector Cut-off Current : BDX54 V = - 22V, I = 0 - 500 A CEO CE B : BDX54A V = - 30V, I = 0 - 500 A CE B : BDX54B V = - 40V, I = 0 - 500 A CE B : BDX54C V = - 50V, I = 0 - 500 A CE B I Emitter Cut-off Current V = - 5V, I = 0 - 2 mA EBO EB C h * DC Current Gain V = - 3V, I = - 3A 750 FE CE C V (sat) * Collector-Emitter Saturation Voltage I = - 3A, I = - 12mA - 2 V CE C B V (sat) * Base-Emitter Saturation Voltage I = - 3A, I = - 12mA - 2.5 V BE C B V * Parallel Diode Forward Voltage I = - 3A - 1.8 - 2.5 V F F I = - 8A - 2.5 V F * Pulse Test: PW=300 s, duty Cycle =1.5% Pulsed 2000 Fairchild Semiconductor International Rev. A, February 2000BDX54/A/B/C 10us 1ms DC Typical Characteristics 100000 -3.6 V = -3V -3.4 CE IC = 250IB -3.2 -3.0 -2.8 10000 -2.6 -2.4 -2.2 -2.0 1000 -1.8 -1.6 -1.4 -1.2 100 -1.0 -0 -1 -10 -0.1 -1 -10 I A , COLLECTOR CURRENT C IC A , COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage -3.2 -3.0 -3.0 -2.8 IC = 250IB -2.8 -2.6 -2.6 -2.4 -2.4 -2.2 -2.2 -2.0 -2.0 -1.8 -1.8 -1.6 -1.6 -1.4 -1.4 -1.2 -1.2 -1.0 -1.0 -0.8 -0.8 -0.6 -0.6 -0.4 -0 -1 -10 -0.1 -1 -10 IC A , COLLECTOR CURRENT IF A , FORWARD CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Damper Diode Forward Voltage -100 80 70 60 IC Max. (Pulsed) -10 50 I Max. (Continuous) C 100us 40 30 -1 20 BDX54 BDX54A 10 BDX54B BDX54C -0.1 0 -1 -10 -100 -1000 0 25 50 75 100 125 150 175 o VCE V , COLLECTOR-EMITTER VOLTAGE T C , CASE TEMPERATURE C Figure 5. Safe Operating Area Figure 6. Power Derating 2000 Fairchild Semiconductor International Rev. A, February 2000 V (sat) V , SATURATION VOLTAGE h , DC CURRENT GAIN CE FE IC A , COLLECTOR CURRENT V (sat) V , SATURATION VOLTAGE VF(sat) V , FORWARD VOLTAGE BE PD W , POWER DISSIPATION

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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