X-On Electronics has gained recognition as a prominent supplier of CAT24C164YI-GT3 EEPROM across the USA, India, Europe, Australia, and various other global locations. CAT24C164YI-GT3 EEPROM are a product manufactured by ON Semiconductor. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

CAT24C164YI-GT3 ON Semiconductor

CAT24C164YI-GT3 electronic component of ON Semiconductor
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Part No.CAT24C164YI-GT3
Manufacturer: ON Semiconductor
Category: EEPROM
Description: EEPROM 16K-Bit Serial Cascadable
Datasheet: CAT24C164YI-GT3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
655: USD 0.6429 ea
Line Total: USD 421.1 
Availability - 0
MOQ: 655  Multiples: 655
Pack Size: 655
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0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 655
Multiples : 655
655 : USD 0.6429

   
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We are delighted to provide the CAT24C164YI-GT3 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CAT24C164YI-GT3 and other electronic components in the EEPROM category and beyond.

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CAT24C164 16 kb CMOS Serial EEPROM, Cascadable Description The CAT24C164 is a 16 kb CMOS cascadable Serial EEPROM device organized internally as 128 pages of 16 bytes each, for a total of CAT24C164 Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Storage Temperature 65 to +150 C Voltage on Any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3) Endurance 1,000,000 Program/Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Page Mode, V = 5 V, 25C. CC Table 3. D.C. OPERATING CHARACTERISTICS (V = 1.8 V to 5.5 V, T = 40C to +85C, unless otherwise specied.) CC A Symbol Parameter Test Conditions Min Max Units I Read Current Read, f = 400 kHz 1 mA CCR SCL I Write Current Write, f = 400 kHz 1 mA CCW SCL I Standby Current All I/O Pins at GND or V 1 A SB CC I I/O Pin Leakage Pin at GND or V 1 A L CC V Input Low Voltage 0.5 V x 0.3 V IL CC V Input High Voltage V x 0.7 V + 0.5 V IH CC CC V Output Low Voltage V 2.5 V, I = 3.0 mA 0.4 V OL1 CC OL V Output Low Voltage V < 2.5 V, I = 1.0 mA 0.2 V OL2 CC OL Table 4. PIN IMPEDANCE CHARACTERISTICS (V = 1.8 V to 5.5 V, T = 40C to +85C, unless otherwise specied.) CC A Symbol Parameter Conditions Max Units C (Note 4) SDA I/O Pin Capacitance V = 0 V 8 pF IN IN C (Note 4) Input Capacitance (other pins) V = 0 V 6 pF IN IN I (Note 5) WP Input Current V < V , V = 5.5 V 200 A WP IN IH CC V < V , V = 3.3 V 150 IN IH CC V < V , V = 1.8 V 100 IN IH CC V > V 1 IN IH 4. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 5. When not driven, the WP pin is pulled down to GND internally. For improved noise immunity, the internal pull down is relatively strong therefore the external driver must be able to supply the pulldown current when attempting to drive the input HIGH. To conserve power, as the input level exceeds the trip point of the CMOS input buffer (~ 0.5 x V ), the strong pulldown reverts to a weak current source. CC

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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