X-On Electronics has gained recognition as a prominent supplier of CAT93C57VI-GT3 EEPROM across the USA, India, Europe, Australia, and various other global locations. CAT93C57VI-GT3 EEPROM are a product manufactured by ON Semiconductor. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

CAT93C57VI-GT3 ON Semiconductor

CAT93C57VI-GT3 electronic component of ON Semiconductor
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See Product Specifications
Part No.CAT93C57VI-GT3
Manufacturer: ON Semiconductor
Category: EEPROM
Description: EEPROM Serial-Microwire 2K-bit 256 x 8/128 x 16 3.3V/5V 8-Pin SOIC N T/R
Datasheet: CAT93C57VI-GT3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0799 ea
Line Total: USD 239.7 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 3000
1 : USD 0.0799
3001 : USD 0.055

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0799
3001 : USD 0.055

   
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We are delighted to provide the CAT93C57VI-GT3 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CAT93C57VI-GT3 and other electronic components in the EEPROM category and beyond.

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CAT93C56, CAT93C57 2-Kb Microwire Serial CMOS EEPROM CAT93C57 Not Recommended for New Designs: Replace with CAT93C56 CAT93C56, CAT93C57 Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Storage Temperature 65 to +150 C Voltage on Any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Block Mode, V = 5 V, 25C CC Table 3. D.C. OPERATING CHARACTERISTICS, CAT93C56 (V = +1.8 V to +5.5 V, T =40C to +125C unless otherwise specified.) CC A Symbol Parameter Test Conditions Min Max Units I Power Supply f = 1 MHz, V = 5.0 V 1 mA CC1 SK CC Current (Write) I Power Supply f = 1 MHz, V = 5.0 V 500 A CC2 SK CC Current (Read) I Power Supply V = GND or V , T = 40C to +85C 2 A SB1 IN CC A Current (Standby) CS = GND ORG = GND T = 40C to +125C 4 (x8 Mode) A I Power Supply V = GND or V , CS = T = 40C to +85C 1 A SB2 IN CC A Current (Standby) GND ORG = Float or V CC T = 40C to +125C 2 (x16 Mode) A I Input Leakage V = GND to V T = 40C to +85C 1 A LI IN CC A Current T = 40C to +125C 2 A I Output Leakage V = GND to V , T = 40C to +85C 1 A LO OUT CC A Current CS = GND T = 40C to +125C 2 A V Input Low Voltage 4.5 V V < 5.5 V 0.1 0.8 V IL1 CC V Input High Voltage 4.5 V V < 5.5 V 2 V + 1 V IH1 CC CC V Input Low Voltage 1.8 V V < 4.5 V 0 V x 0.2 V IL2 CC CC V Input High Voltage 1.8 V V < 4.5 V V x 0.7 V + 1 V IH2 CC CC CC V Output Low Voltage 4.5 V V < 5.5 V, 0.4 V OL1 CC I = 2.1 mA OL V Output High Voltage 4.5 V V < 5.5 V, 2.4 V OH1 CC I = 400 A OH V Output Low Voltage 1.8 V V < 4.5 V, 0.2 V OL2 CC I = 1 mA OL V Output High Voltage 1.8 V V < 4.5 V, V 0.2 V OH2 CC CC I = 100 A OH Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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