X-On Electronics has gained recognition as a prominent supplier of CAT93C76BZI-GT3 EEPROM across the USA, India, Europe, Australia, and various other global locations. CAT93C76BZI-GT3 EEPROM are a product manufactured by ON Semiconductor. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

CAT93C76BZI-GT3 ON Semiconductor

CAT93C76BZI-GT3 electronic component of ON Semiconductor
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Part No.CAT93C76BZI-GT3
Manufacturer: ON Semiconductor
Category: EEPROM
Description: 8-Kb Microwire Serial EEPROM
Datasheet: CAT93C76BZI-GT3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1196 ea
Line Total: USD 358.8 
Availability - 1505
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
1505
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1196

   
Manufacturer
Product Category
RoHS - XON
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We are delighted to provide the CAT93C76BZI-GT3 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CAT93C76BZI-GT3 and other electronic components in the EEPROM category and beyond.

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CAT93C76B EEPROM Serial 8-Kb Microwire Description The CAT93C76B is an 8Kb Microwire Serial EEPROM memory device which is configured as either registers of 16 bits (ORG pin at www.onsemi.com V or Not Connected) or 8 bits (ORG pin at GND). Each register can CC be written (or read) serially by using the DI (or DO) pin. The CAT93C76B is manufactured using ON Semiconductors advanced CMOS EEPROM floating gate technology. The device is designed to SOIC8 UDFN8 endure 1,000,000 program/erase cycles and has a data retention of 100 V SUFFIX HU4 SUFFIX years. The device is available in 8pin PDIP, SOIC, TSSOP, MSOP CASE 751BD CASE 517AZ and 8pad UDFN packages. Features High Speed Operation: 4 MHz (5 V), 2 MHz (1.8 V) 1.8 V (1.65 V*) to 5.5 V Supply Voltage Range PDIP8 TSSOP8 MSOP8 L SUFFIX Y SUFFIX Z SUFFIX Selectable x8 or x16 Memory Organization CASE 646AA CASE 948AL CASE 846AD Selftimed Write Cycle with Autoclear Software Write Protection PIN CONFIGURATION Powerup Inadvertant Write Protection 1 Low Power CMOS Technology V CS CC SK NC 1,000,000 Program/Erase Cycles DI ORG DO 100 Year Data Retention GND Industrial and Extended Temperature Ranges PDIP (L), SOIC (V), TSSOP (Y), UDFN (HU4), MSOP (Z) Sequential Read (Top View) 8pin PDIP, SOIC, TSSOP, MSOP and 8Pad UDFN Packages This Device is PbFree, Halogen Free/BFR Free and RoHS PIN FUNCTION Compliant Pin Name Function V CS Chip Select CC SK Serial Clock Input ORG DI Serial Data Input DI DO Serial Data Output CS CAT93C76B DO V Power Supply CC SK GND Ground ORG Memory Organization GND NC No Connection Figure 1. Functional Symbol NOTE: When the ORG pin is connected to V , the CC x16 organization is selected. When it is connected to ground, the x8 organization is selected. If the ORG pin *CAT93C76BxxxxL (T = 20 C to +85 C) A is left unconnected, then an internal pullup device will select the x16 organization. For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: May, 2018 Rev.1 CAT93C76B/DCAT93C76B Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Temperature Under Bias 55 to +125 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 2.0 to +V +2.0 V CC V with Respect to Ground 2.0 to +7.0 V CC Lead Soldering Temperature (10 seconds) 300 C Output Short Circuit Current (Note 2) 100 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The minimum DC input voltage is 0.5 V. During transitions, inputs may undershoot to 2.0 V for periods of less than 20 ns. Maximum DC voltage on output pins is V +0.5 V, which may overshoot to V +2.0 V for periods of less than 20 ns. CC CC 2. Output shorted for no more than one second. Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Reference Test Method Min Units N (Note 3) Endurance MILSTD883, Test Method 1033 1,000,000 Cycles / Byte END T (Note 3) Data Retention MILSTD883, Test Method 1008 100 Years DR V (Note 3) ESD Susceptibility MILSTD883, Test Method 3015 2,000 V ZAP I (Notes 3, 4) LatchUp JEDEC Standard 17 100 mA LTH 3. These parameters are tested initially and after a design or process change that affects the parameter. 4. Latchup protection is provided for stresses up to 100 mA on I/O pins from 1 V to V + 1 V. CC Table 3. D.C. OPERATING CHARACTERISTICS (V = +1.8 V to +5.5 V, T = 40C to +125C, V = +1.65 V to +5.5 V, T = 20C to +85C unless otherwise specified.) CC A CC A Symbol Parameter Test Conditions Min Max Units I Supply Current (Write) Write, V = 5.0 V 2 mA CC1 CC I Supply Current (Read) Read, DO open, f = 2 MHz, V = 5.0 V 500 A CC2 SK CC I Standby Current V = GND or V T = 40C to +85C 2 A SB1 IN CC A (x8 Mode) CS = GND, ORG = GND T = 40C to +125C 5 A I Standby Current V = GND or V T = 40C to +85C 1 A SB2 IN CC A (x16 Mode) CS = GND, T = 40C to +125C 3 ORG = Float or V A CC I Input Leakage Current V = GND to V T = 40C to +85C 1 A LI IN CC A T = 40C to +125C 2 A I Output Leakage V = GND to V T = 40C to +85C 1 A LO OUT CC A Current CS = GND T = 40C to +125C 2 A V Input Low Voltage 4.5 V V < 5.5 V 0.1 0.8 V IL1 CC V Input High Voltage 4.5 V V < 5.5 V 2 V + 1 V IH1 CC CC V Input Low Voltage 1.65 V V < 4.5 V 0 V x 0.2 V IL2 CC CC V Input High Voltage 1.65 V V < 4.5 V V x 0.7 V + 1 V IH2 CC CC CC V Output Low Voltage 4.5 V V < 5.5 V, I = 3 mA 0.4 V OL1 CC OL V Output High Voltage 2.4 V 4.5 V V < 5.5 V, I = 400 A OH1 CC OH V Output Low Voltage 1.65 V V < 4.5 V, I = 1 mA 0.2 V OL2 CC OL V Output High Voltage 1.65 V V < 4.5 V, I = 100 A V 0.2 V OH2 CC OH CC Table 4. PIN CAPACITANCE (Note 3) Symbol Test Conditions Min Typ Max Units C Output Capacitance (DO) V = 0 V 5 pF OUT OUT C Input Capacitance (CS, SK, DI, ORG) V = 0 V 5 pF IN IN www.onsemi.com 2

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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