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This literature is subject to all applicable copyright laws and is not for resale in any manner.EGP30A - EGP30K 3.0 Ampere Glass Passivated High Efficiency Rectifiers July 2007 EGP30A - EGP30K 3.0 Ampere Glass Passivated High Efficiency Rectifiers Features Glass passivated cavity-free junction High surge current capability Low leakage current Superfast recovery time for high efficiency Low forward voltage, high current capability DO-201AD Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings* T = 25 C unless otherwise noted a Symbol Parameter Value Units Average Rectified Current I O 3.0 A .375 lead length TL = 55 C i Peak Forward Surge Current f(surge) 8.3 ms single half-sine-wave 125 A Superimposed on rated load (JEDEC method) P Total Device Dissipation 6.25 W D 50 mW C Derate above 25C R JA Thermal Resistance, Junction to Ambient 20 C/W R JL Thermal Resistance, Junction to Lead 8.5 C/W T , T Junction and Storage Temperature Range -65 ~ 150 C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* T = 25C unless otherwise noted a Device Parameter 30A 30B 30C 30D 30F 30G 30J 30K Units Peak Repetitive Reverse Voltage 50 100 150 200 300 400 600 800 V Maximum RMS Voltage 35 70 105 140 210 280 420 560 V DC Reverse Voltage (Rated VR) 50 100 150 200 300 400 600 800 V Maximum Reverse Current rated VR TA = 25 C 5.0 A TA = 125 C 100 A Maximum Reverse Recovery Time 50 75 nS IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Maximum Forward Voltage 3.0 A 0.95 1.25 1.7 V Typical Junction Capacitance 95 75 pF VR = 4.0 V, f = 1.0 MHz * Pulse Test: Pulse Width 300 s, Duty Cycle2% 2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com EGP30A - EGP30K Rev. A