EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G Dual Common EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit ONE JUNCTION HEATED Total Device Dissipation P D T = 25C 357 (Note 1) mW A Derate above 25C 2.9 (Note 1) mW/C Thermal Resistance, Junction-to-Ambient R 350 (Note 1) C/W JA BOTH JUNCTIONS HEATED Total Device Dissipation P D T = 25C 500 (Note 1) mW A Derate above 25C 4.0 (Note 1) mW/C Thermal Resistance, Junction-to-Ambient R 250 (Note 1) C/W JA Junction and Storage Temperature T , T 55 to +150 C J stg 1. FR4 Minimum Pad DEVICE ORDERING INFORMATION, MARKING AND RESISTOR VALUES Transistor 1 PNP Transistor 2 NPN Device Marking R1 (K) R2 (K) R1 (K) R2 (K) Package Shipping EMC2DXV5T1G UC 22 22 22 22 4000 / Tape & Reel NSVEMC2DXV5T1G* UC 22 22 22 22 4000 / Tape & Reel EMC3DXV5T1G 4000 / Tape & Reel SOT553 U3 10 10 10 10 (PbFree) EMC3DXV5T5G 8000 / Tape & Reel EMC4DXV5T1G UE 10 47 47 47 4000 / Tape & Reel EMC5DXV5T1G U5 4.7 10 47 47 4000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable. 250 200 150 100 R = 833C/W JA 50 0 - 50 0 50 100 150 T , AMBIENT TEMPERATURE (C) A Figure 1. Derating Curve