X-On Electronics has gained recognition as a prominent supplier of EMD4DXV6T1G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. EMD4DXV6T1G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

EMD4DXV6T1G ON Semiconductor

EMD4DXV6T1G electronic component of ON Semiconductor
EMD4DXV6T1G ON Semiconductor
EMD4DXV6T1G Bipolar Transistors - Pre-Biased
EMD4DXV6T1G  Semiconductors

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See Product Specifications
Part No. EMD4DXV6T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased Dual Complementary NPN & PNP Digital
Datasheet: EMD4DXV6T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3487 ea
Line Total: USD 0.35 
Availability - 7342
Ship by Wed. 23 Apr to Fri. 25 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
77600
Ship by Fri. 25 Apr to Thu. 01 May
MOQ : 379
Multiples : 1
379 : USD 0.1716
606 : USD 0.1072
916 : USD 0.071
1119 : USD 0.0581

1455
Ship by Fri. 25 Apr to Thu. 01 May
MOQ : 316
Multiples : 1
316 : USD 0.2059
324 : USD 0.2004
333 : USD 0.195
343 : USD 0.1896
353 : USD 0.1842
500 : USD 0.1787
1000 : USD 0.1733

7342
Ship by Wed. 23 Apr to Fri. 25 Apr
MOQ : 1
Multiples : 1
1 : USD 0.3487
10 : USD 0.22
100 : USD 0.1404
500 : USD 0.0979
1000 : USD 0.0858
2000 : USD 0.077
4000 : USD 0.0649
8000 : USD 0.0594
24000 : USD 0.0561

13580
Ship by Fri. 25 Apr to Thu. 01 May
MOQ : 4581
Multiples : 1
4581 : USD 0.1024

77600
Ship by Fri. 25 Apr to Thu. 01 May
MOQ : 1119
Multiples : 1
1119 : USD 0.0581

62080
Ship by Fri. 25 Apr to Thu. 01 May
MOQ : 4581
Multiples : 1
4581 : USD 0.1024

291000
Ship by Fri. 25 Apr to Thu. 01 May
MOQ : 4581
Multiples : 1
4581 : USD 0.1024

98940
Ship by Fri. 25 Apr to Thu. 01 May
MOQ : 4581
Multiples : 1
4581 : USD 0.1024

1455
Ship by Fri. 25 Apr to Thu. 01 May
MOQ : 343
Multiples : 1
343 : USD 0.1896
353 : USD 0.1842
500 : USD 0.1787
1000 : USD 0.1733

23280
Ship by Fri. 25 Apr to Thu. 01 May
MOQ : 4581
Multiples : 1
4581 : USD 0.1024

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Qualification
Brand
Power Dissipation
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Number Of Channels
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the EMD4DXV6T1G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EMD4DXV6T1G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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EMD4DXV6 Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network EMD4DXV6 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Q1 TRANSISTOR: PNP OFF CHARACTERISTICS Collector-Base Cutoff Current (V = 50 V, I = 0) I 100 nAdc CB E CBO Collector-Emitter Cutoff Current (V = 50 V, I = 0) I 500 nAdc CB B CEO Emitter-Base Cutoff Current (V = 6.0, I = 5.0 mA) I 0.2 mAdc EB C EBO ON CHARACTERISTICS Collector-Base Breakdown Voltage (I = 10 A, I = 0) V 50 Vdc C E (BR)CBO Collector-Emitter Breakdown Voltage (I = 2.0 mA, I = 0) V 50 Vdc C B (BR)CEO DC Current Gain (V = 10 V, I = 5.0 mA) h 80 140 CE C FE CollectorEmitter Saturation Voltage (I = 10 mA, I = 0.3 mA) V 0.25 Vdc C B CE(SAT) Output Voltage (on) (V = 5.0 V, V = 2.5 V, R = 1.0 k ) V 0.2 Vdc CC B L OL Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 k ) V 4.9 Vdc OH CC B L Input Resistor R1 7.0 10 13 k Resistor Ratio R1/R2 0.17 0.21 0.25 Q2 TRANSISTOR: NPN OFF CHARACTERISTICS Collector-Base Cutoff Current (V = 50 V, I = 0) I 100 nAdc CB E CBO Collector-Emitter Cutoff Current (V = 50 V, I = 0) I 500 nAdc CB B CEO Emitter-Base Cutoff Current (V = 6.0, I = 0 mA) I 0.1 mAdc EB C EBO ON CHARACTERISTICS Collector-Base Breakdown Voltage (I = 10 A, I = 0) V 50 Vdc C E (BR)CBO Collector-Emitter Breakdown Voltage (I = 2.0 mA, I = 0) V 50 Vdc C B (BR)CEO DC Current Gain (V = 10 V, I = 5.0 mA) h 80 140 CE C FE CollectorEmitter Saturation Voltage (I = 10 mA, I = 0.3 mA) V 0.25 Vdc C B CE(SAT) Output Voltage (on) (V = 5.0 V, V = 3.5 V, R = 1.0 k ) V 0.2 Vdc CC B L OL Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 k ) V 4.9 Vdc CC B L OH Input Resistor R1 32.9 47 61.1 k Resistor Ratio R1/R2 0.8 1.0 1.2 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 250 200 150 100 R = 833C/W JA 50 0 - 50 0 50 100 150 T , AMBIENT TEMPERATURE (C) A Figure 1. Derating Curve

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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