X-On Electronics has gained recognition as a prominent supplier of EMD4DXV6T1G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. EMD4DXV6T1G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

EMD4DXV6T1G ON Semiconductor

Hot EMD4DXV6T1G electronic component of ON Semiconductor
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Part No.EMD4DXV6T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased Dual Complementary NPN & PNP Digital
Datasheet: EMD4DXV6T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2366 ea
Line Total: USD 0.24 
Availability - 77600
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
77600
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2366
10 : USD 0.1583
100 : USD 0.1062
500 : USD 0.0815
1000 : USD 0.068
2000 : USD 0.0654
4000 : USD 0.0602
8000 : USD 0.0581

1455
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2456
10 : USD 0.2444
25 : USD 0.2434
100 : USD 0.2423
250 : USD 0.2412
500 : USD 0.2401
1000 : USD 0.239

7342
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.286
10 : USD 0.1914
100 : USD 0.099
1000 : USD 0.0803
4000 : USD 0.0726
8000 : USD 0.066
24000 : USD 0.0616

13580
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 6565
Multiples : 1
6565 : USD 0.0742

77600
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 129
Multiples : 1
129 : USD 0.0581

62080
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 6565
Multiples : 1
6565 : USD 0.0742

291000
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 6565
Multiples : 1
6565 : USD 0.0742

98940
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 6565
Multiples : 1
6565 : USD 0.0742

23280
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 6565
Multiples : 1
6565 : USD 0.0742

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Qualification
Brand
Power Dissipation
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Number Of Channels
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the EMD4DXV6T1G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EMD4DXV6T1G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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EMD4DXV6 Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network EMD4DXV6 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Q1 TRANSISTOR: PNP OFF CHARACTERISTICS Collector-Base Cutoff Current (V = 50 V, I = 0) I 100 nAdc CB E CBO Collector-Emitter Cutoff Current (V = 50 V, I = 0) I 500 nAdc CB B CEO Emitter-Base Cutoff Current (V = 6.0, I = 5.0 mA) I 0.2 mAdc EB C EBO ON CHARACTERISTICS Collector-Base Breakdown Voltage (I = 10 A, I = 0) V 50 Vdc C E (BR)CBO Collector-Emitter Breakdown Voltage (I = 2.0 mA, I = 0) V 50 Vdc C B (BR)CEO DC Current Gain (V = 10 V, I = 5.0 mA) h 80 140 CE C FE CollectorEmitter Saturation Voltage (I = 10 mA, I = 0.3 mA) V 0.25 Vdc C B CE(SAT) Output Voltage (on) (V = 5.0 V, V = 2.5 V, R = 1.0 k ) V 0.2 Vdc CC B L OL Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 k ) V 4.9 Vdc OH CC B L Input Resistor R1 7.0 10 13 k Resistor Ratio R1/R2 0.17 0.21 0.25 Q2 TRANSISTOR: NPN OFF CHARACTERISTICS Collector-Base Cutoff Current (V = 50 V, I = 0) I 100 nAdc CB E CBO Collector-Emitter Cutoff Current (V = 50 V, I = 0) I 500 nAdc CB B CEO Emitter-Base Cutoff Current (V = 6.0, I = 0 mA) I 0.1 mAdc EB C EBO ON CHARACTERISTICS Collector-Base Breakdown Voltage (I = 10 A, I = 0) V 50 Vdc C E (BR)CBO Collector-Emitter Breakdown Voltage (I = 2.0 mA, I = 0) V 50 Vdc C B (BR)CEO DC Current Gain (V = 10 V, I = 5.0 mA) h 80 140 CE C FE CollectorEmitter Saturation Voltage (I = 10 mA, I = 0.3 mA) V 0.25 Vdc C B CE(SAT) Output Voltage (on) (V = 5.0 V, V = 3.5 V, R = 1.0 k ) V 0.2 Vdc CC B L OL Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 k ) V 4.9 Vdc CC B L OH Input Resistor R1 32.9 47 61.1 k Resistor Ratio R1/R2 0.8 1.0 1.2 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 250 200 150 100 R = 833C/W JA 50 0 - 50 0 50 100 150 T , AMBIENT TEMPERATURE (C) A Figure 1. Derating Curve

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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