X-On Electronics has gained recognition as a prominent supplier of EMD4DXV6T5G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. EMD4DXV6T5G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

EMD4DXV6T5G ON Semiconductor

EMD4DXV6T5G electronic component of ON Semiconductor
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See Product Specifications
Part No.EMD4DXV6T5G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP Digital
Datasheet: EMD4DXV6T5G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 8000
Multiples : 8000
8000 : USD 0.0901
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.6077
10 : USD 0.4574
100 : USD 0.2041
500 : USD 0.1361
1000 : USD 0.1071
2500 : USD 0.0819
8000 : USD 0.0739
24000 : USD 0.0702
48000 : USD 0.0654
N/A

Obsolete
0
MOQ : 16000
Multiples : 16000
16000 : USD 0.0837
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the EMD4DXV6T5G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EMD4DXV6T5G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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EMD4DXV6 Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network EMD4DXV6 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Q1 TRANSISTOR: PNP OFF CHARACTERISTICS Collector-Base Cutoff Current (V = 50 V, I = 0) I 100 nAdc CB E CBO Collector-Emitter Cutoff Current (V = 50 V, I = 0) I 500 nAdc CB B CEO Emitter-Base Cutoff Current (V = 6.0, I = 5.0 mA) I 0.2 mAdc EB C EBO ON CHARACTERISTICS Collector-Base Breakdown Voltage (I = 10 A, I = 0) V 50 Vdc C E (BR)CBO Collector-Emitter Breakdown Voltage (I = 2.0 mA, I = 0) V 50 Vdc C B (BR)CEO DC Current Gain (V = 10 V, I = 5.0 mA) h 80 140 CE C FE CollectorEmitter Saturation Voltage (I = 10 mA, I = 0.3 mA) V 0.25 Vdc C B CE(SAT) Output Voltage (on) (V = 5.0 V, V = 2.5 V, R = 1.0 k ) V 0.2 Vdc CC B L OL Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 k ) V 4.9 Vdc OH CC B L Input Resistor R1 7.0 10 13 k Resistor Ratio R1/R2 0.17 0.21 0.25 Q2 TRANSISTOR: NPN OFF CHARACTERISTICS Collector-Base Cutoff Current (V = 50 V, I = 0) I 100 nAdc CB E CBO Collector-Emitter Cutoff Current (V = 50 V, I = 0) I 500 nAdc CB B CEO Emitter-Base Cutoff Current (V = 6.0, I = 0 mA) I 0.1 mAdc EB C EBO ON CHARACTERISTICS Collector-Base Breakdown Voltage (I = 10 A, I = 0) V 50 Vdc C E (BR)CBO Collector-Emitter Breakdown Voltage (I = 2.0 mA, I = 0) V 50 Vdc C B (BR)CEO DC Current Gain (V = 10 V, I = 5.0 mA) h 80 140 CE C FE CollectorEmitter Saturation Voltage (I = 10 mA, I = 0.3 mA) V 0.25 Vdc C B CE(SAT) Output Voltage (on) (V = 5.0 V, V = 3.5 V, R = 1.0 k ) V 0.2 Vdc CC B L OL Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 k ) V 4.9 Vdc CC B L OH Input Resistor R1 32.9 47 61.1 k Resistor Ratio R1/R2 0.8 1.0 1.2 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 250 200 150 100 R = 833C/W JA 50 0 - 50 0 50 100 150 T , AMBIENT TEMPERATURE (C) A Figure 1. Derating Curve

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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