EMF18XV6T5 Dual Transistor - Power Management NPN/PNP Dual (Complementary) EMF18XV6T5 ELECTRICAL CHARACTERISTICS (T = 25C) (Note 2) A Characteristic Symbol Min Typ Max Unit Q1: NPN Collector-Base Cutoff Current (V = 50 V, I = 0) I 100 nAdc CB E CBO Collector-Emitter Cutoff Current (V = 50 V, I = 0) I 500 nAdc CE B CEO Emitter-Base Cutoff Current (V = 6.0 V, I = 0) I 0.1 mAdc EB C EBO Collector-Base Breakdown Voltage (I = 10 A, I = 0) V 50 Vdc C E (BR)CBO Collector-Emitter Breakdown Voltage (Note 4) (I = 2.0 mA, I = 0) V 50 Vdc C B (BR)CEO DC Current Gain (V = 10 V, I = 5.0 mA) h 80 140 CE C FE Collector-Emitter Saturation Voltage (I = 10 mA, I = 0.3 mA) V 0.25 Vdc C B CE(sat) Output Voltage (on) (V = 5.0 V, V = 3.5 V, R = 1.0 k ) V 0.2 Vdc CC B L OL Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 k ) V 4.9 Vdc OH CC B L Input Resistor R1 32.9 47 61.1 k Resistor Ratio R1/R2 0.8 1.0 1.2 Q2: PNP CollectorBase Breakdown Voltage (I = 50 Adc, I = 0) V 60 Vdc C E (BR)CBO CollectorEmitter Breakdown Voltage (I = 1.0 mAdc, I = 0) V 50 Vdc C B (BR)CEO EmitterBase Breakdown Voltage (I = 50 Adc, I = 0) V 6.0 Vdc E E (BR)EBO CollectorBase Cutoff Current (V = 30 Vdc, I = 0) I 0.5 nA CB E CBO EmitterBase Cutoff Current (V = 5.0 Vdc, I = 0) I 0.5 A EB B EBO CollectorEmitter Saturation Voltage (Note 4) V 0.5 Vdc CE(sat) (I = 50 mAdc, I = 5.0 mAdc) C B DC Current Gain (Note 4) (V = 6.0 Vdc, I = 1.0 mAdc) h 120 560 CE C FE Transition Frequency (V = 12 Vdc, I = 2.0 mAdc, f = 30 MHz) f 140 MHz CE C T Output Capacitance (V = 12 Vdc, I = 0 Adc, f = 1.0 MHz) C 3.5 pF CB E OB 3. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 4. Pulse Test: Pulse Width 300 s, D.C. 2%.