EMG2DXV5, EMG5DXV5 Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single EMG2DXV5, EMG5DXV5 DEVICE MARKING AND RESISTOR VALUES Device Package Marking R1 (K) R2 (K) EMG2DXV5 SOT553 UP 47 47 EMG5DXV5 SOT553 UF 10 47 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (Q1 & Q2) Collector-Base Cutoff Current (V = 50 V, I = 0) I 100 nAdc CB E CBO Collector-Emitter Cutoff Current (V = 50 V, I = 0) I 500 nAdc CE B CEO Emitter-Base Cutoff Current (V = 6.0 V, I = 0) EMG2DXV5 I 0.1 mAdc EB C EBO EMG5DXV5 0.2 Collector-Base Breakdown Voltage (I = 10 A, I = 0) V 50 Vdc C E (BR)CBO Collector-Emitter Breakdown Voltage (Note 3) V 50 Vdc (BR)CEO (I = 2.0 mA, I = 0) C B ON CHARACTERISTICS (Q1 & Q2) (Note 3) DC Current Gain (V = 10 V, I = 5.0 mA) EMG2DXV5 h 80 140 CE C FE EMG5DXV5 80 140 Collector-Emitter Saturation Voltage (IC = 10 mA, I = 0.3 mA) V 0.25 Vdc B CE(sat) Output Voltage (on) V Vdc OL (V = 5.0 V, V = 3.5 V, R = 1.0 k ) EMG2DXV5 0.2 CC B L (V = 5.0 V, V = 2.5 V, R = 1.0 k ) EMG5DXV5 0.2 CC B L Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 k ) V 4.9 Vdc CC B L OH Input Resistor EMG2DXV5 R 32.9 47 61.1 k 1 EMG5DXV5 7.0 10 13 Resistor Ratio EMG2DXV5 R /R 0.8 1.0 1.2 1 2 EMG5DXV5 0.17 0.21 0.25 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% 350 300 250 200 150 100 50 R = 370C/W JA 0 50 0 50 100 150 T , AMBIENT TEMPERATURE (C) A Figure 1. Derating Curve