ES1DAF, ES1JAF Surface Mount Ultrafast Rectifier Features Fast Switching Speed Maximum T 35 ns rr www.onsemi.com Ultra Thin Profile Maximum Height of 1.0 mm Glass Passivated Junction UL Flammability 94V0 Classification 12 MSL 1 Cathode Anode Green Mold Compound Ultrafast Rectifier These Devices are PbFree, Halogen Free Free and are RoHS Compliant Specifications DO214AD ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A (SMAF) Value CASE 403AD ES1DAF ES1JAF Symbol Parameter Unit MARKING DIAGRAMS V Recurrent Peak Reverse Voltage 200 600 V RRM V RMS Voltage 140 420 V RMS Y&Z&3 V DC Blocking Voltage 200 600 V ES1DAF R I Average Forward Current 1 A F(AV) Band Indicates Cathode I Peak Forward Surge Current: 30 A FSM Y = ON Semiconductor Logo 8.3 ms Single Half SineWave &Z = Assembly Plant Code Superimposed on Rated Load &3 = Data Code (Year & Week) T Operating Junction Temperature 55 to +150 C J ES1DAF = Specific Device Code Range T Storage Temperature Range 55 to +150 C STG Y&Z&3 Stresses exceeding those listed in the Maximum Ratings table may damage the ES1JAF device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Band Indicates Cathode Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) ES1JAF = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2018 Rev. 2 ES1JAF/DES1DAF, ES1JAF THERMAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Characteristic Value Unit Typical Thermal Characteristics, JunctiontoLead (Note 1) 24 C/W JL R Typical Thermal Resistance, JunctiontoAmbient (Note 2) 150 C/W JA 2 1. Mounted on an FR4 PCB, singlesided copper, with 48 cm copper pad area. 2. Mounted on an FR4 PCB, singlesided copper, mini pad. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Conditions Min Typ Max Unit V Forward Voltage I = 1 A ES1DAF 0.95 V F F ES1JAF 1.70 I Reverse Current V = V 1 A R R DC t Reverse Recovery Time I = 0.5 A, I = 1 A, I = 0.25 A 34 ns rr F R rr C Junction Capacitance V = 4 V, f = 1 MHz 15 pF J R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Mark Package Shipping ES1DAF ES1DAF DO214AD (SMAF) 10000 / Tape & Reel (PbFree/Halogen Free) ES1JAF ES1JAF DO214AD (SMAF) 10000 / Tape & Reel (PbFree/Halogen Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2