ES3D ON Semiconductor

DATA SHEET www.onsemi.com Fast Rectifiers 2 1 ES3A - ES3J Anode Cathode Features For Surface Mount Applications 1 GlassPassivated Junction LowProfile Package Easy Pick and Place 2 Builtin Strain Relief SMC Superfast Recovery Times for High Efficiency CASE 403AG These Devices are PbFree and Halid Free MARKING DIAGRAM ON ZXYY DDDD Z = Assembly Plant Code X = Last Digit of Year of Manufacture YY = Weekly Code of Manufacture DDDD = Specific Device Code ORDERING INFORMATION Part Number Device Code Marking Package Shipping ES3A ES3A DO214AB (SMC) 3000 / Tape & Reel (PbFree) ES3B ES3B 3000 / Tape & Reel ES3C ES3C 3000 / Tape & Reel ES3D ES3D 3000 / Tape & Reel ES3J ES3J 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1999 1 Publication Order Number: September, 2021 Rev. 3 ES3J/DES3A ES3J ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A Value ES3A ES3B ES3C ES3D ES3J Symbol Parameter Unit V Maximum Repetitive Reverse Voltage 50 100 150 200 600 V RRM I Average Rectified Forward Current, 3.0 A F(AV) .375 Lead Length T = 75C A I NonRepetitive Peak Forward Surge Current 8.3 ms Single 100 A FSM HalfSine Wave T Storage Temperature Range 55 to +150 C STG T Operating Junction Temperature 55 to +150 C J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Value Unit P Power Dissipation 1.66 W D R Thermal Resistance, Maximum Land Pattern: 16 x 16 mm 47 C/W JA Junction to Ambient (Note 1) Minimum Land Pattern: 2.6 x 3.2 mm 125 R Thermal Resistance, Maximum Land Pattern: 16 x 16 mm 12 C/W JL Junction to Lead (Note 1) Minimum Land Pattern: 2.6 x 3.2 mm 16 1. Device mounted on FR4 PCB 0.013 mm. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Value ES3A ES3B ES3C ES3D ES3J Symbol Parameter Conditions Unit V Maximum Forward Voltage I = 3.0 A 0.95 1.70 V F F t Reverse Recovery Time I = 0.5 A, Typ. 20 35 ns rr F I = 1.0 A R Max. 30 45 I = 0.25 A RR I Maximum Reverse Current T = 25C 10 A R A at Rated V R T = 100C 500 A C Total Capacitance V = 4.0 V, f = 1.0 MHz 45 pF T R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2