333 3 ESH2B, ESH2C, ESH2D www.vishay.com Vishay General Semiconductor Surface-Mount Ultrafast Plastic Rectifier FEATURES Glass passivated pellet chip junction Available Ideal for automated placement Ultrafast recovery times for high efficiency Low forward voltage, low power loss High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C AEC-Q101 qualified available SMB (DO-214AA) - Automotive ordering code: base P/NHE3 Material categorization: for definitions of compliance Cathode Anode please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS LINKS TO ADDITIONAL RESOURCES For use in high frequency rectification and freewheeling application in switching mode converter and inverter for 3D Models both consumer and automotive. MECHANICAL DATA Case: SMB (DO-214AA) PRIMARY CHARACTERISTICS Molding compound meets UL 94 V-0 flammability rating I 2.0 A F(AV) Base P/N-E3 - RoHS-compliant, commercial grade V 100 V, 150 V, 200 V RRM Base P/NHE3 X - RoHS-compliant, AEC-Q101 qualified t 25 ns rr ( X denotes revision code e.g. A, B,.....) V at I = 2 A 0.93 V F F Terminals: matte tin plated leads, solderable per T max. 175 C J J-STD-002 and JESD 22-B102 Package SMB (DO-214AA) E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix Circuit configuration Single meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL ESH2B ESH2C ESH2D UNIT Device marking code EHB EHC EHD Maximum repetitive peak reverse voltage V 100 150 200 V RRM Maximum RMS voltage V 70 105 140 V RMS Maximum DC blocking voltage V 100 150 200 V DC Maximum average forward rectified current (fig. 1) I 2.0 A F(AV) Peak forward surge current 8.3 ms single half sine-wave I 60 A FSM superimposed on rated load Operating junction and storage temperature range T , T -55 to +175 C J STG Revision: 13-May-2020 Document Number: 84649 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD DESH2B, ESH2C, ESH2D www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT (1) Maximum instantaneous forward voltage I = 2 A V 0.93 V F F T = 25 C 2.0 Maximum DC reverse current A I A R at rated DC blocking voltage T = 125 C 50 A Maximum reverse recovery time I = 0.5 A, I = 1 A, I = 0.25 A t 25 ns F R rr rr T = 25 C 35 I = 2 A, V = 30 V, J F R Typical reverse recovery time t ns rr dI/dt = 50 A/s, I = 10 % I rr RM T = 100 C 55 J T = 25 C 20 I = 2 A, V = 30 V, J F R Typical stored charge Q nC rr dI/dt = 50 A/s, I = 10 % I rr RM T = 100 C 35 J Typical junction capacitance 4.0 V, 1 MHz C 30 pF J Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL ESH2B ESH2C ESH2D UNIT (1) R 65 JA Typical thermal resistance C/W (1) R 20 JL Note (1) Units mounted on PCB with 8.0 mm x 8.0 mm land areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE ESH2D-E3/52T 0.096 52T 750 7 diameter plastic tape and reel ESH2D-E3/5BT 0.096 5BT 3200 13 diameter plastic tape and reel (1) ESH2DHE3 A/H 0.096 H 750 7 diameter plastic tape and reel (1) ESH2DHE3 A/I 0.096 I 3200 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 13-May-2020 Document Number: 84649 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000