FDP045N10A / FDI045N10A MOSFET N-Channel, POWERTRENCH 100 V, 164 A, 4.5 m Description www.onsemi.com This NChannel MOSFET is produced using ON Semiconductors advance POWERTRENCH process that has been tailored to minimize D the on state resistance while maintaining superior switching performance. Features G R = 3.8 m ( Typ.) V = 10 V, I = 100 A DS(on) GS D Fast Switching Speed Low Gate Charge, Q = 54 nC (Typ.) G S High Performance Trench Technology for Extremely Low R DS(on) High Power and Current Handling Capability This Device is PbFree and is RoHS Compliant Applications Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies Micro Solar Inverter 2 TO220 I PAK CASE 221A09 CASE 418AV MARKING DIAGRAM Y&Z&3&K FDI 045N10A Y&Z&3&K FDP 045N10A Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FDP/FDI045N10A = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: June, 2019 Rev. 3 FDP045N10A/DFDP045N10A / FDI045N10A MOSFET MAXIMUM RATINGS (T = 25C Unless Otherwise Noted) C FDP045N10A F102 Symbol Parameter Unit FDI045N10A F102 V Drain to Source Voltage 100 V DSS V Gate to Source Voltage 20 V GSS I Drain Current A D Continuous (T = 25C, Silicon Limited) 164* C Continuous (T = 100C, Silicon LImited) 116 C Continuous (T = 25C, Package Limited) 120 C I Drain Current Pulsed (Note 1) 656 A DM E Single Pulsed Avalanche Energy (Note 2) 637 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns P Power Dissipation (T = 25C) 263 W D C Derate Above 25C 1.75 W/C T , T Operating and Storage Temperature Range 55 to +175 J STG C T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 L C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120 A. THERMAL CHARACTERISTICS FDP045N10A F102 FDI045N10A F102 Symbol Parameter Unit RJC Thermal Resistance, Junction to Case, Max. 0.57 C RJA Thermal Resistance, Junction to Ambient, Max. 62.5 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FDP045N10A F102 FDP045N10A TO220 Tube N/A N/A 50 Units 2 FDI045N10A F102 FDI045N10A I PAK Tube N/A N/A 50 Units ELECTRICAL CHARACTERISTICS (T = 25C Unless Otherwise Noted) C Symbol Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS I = 250 mA, V = 0 V BV Drain to Source Breakdown Voltage 100 V DSS D GS BV Breakdown Voltage Temperature I = 250 mA, Referenced to 25C 0.07 V/C DSS D / T Coefficient J I Zero Gate Voltage Drain Current A V = 80 V, V = 0 V 1 DSS DS GS V = 80 V, T = 150C 500 DS C I Gate to Body Leakage Current V = 20 V, V = 0 V 100 nA GSS GS DS ON CHARACTERISTICS V Gate Threshold Voltage V = V , I = 250 mA 2.0 4.0 V GS DS D GS(th) R Static Drain to Source On Resistance V = 10 V, I = 100 A 3.8 4.5 m DS(on) GS D V = 10 V, I = 100 A g Forward Transconductance 132 S FS DS D www.onsemi.com 2