FNB81060T3 Motion SPM 8 Series FNB81060T3 is a Motion SPM 8 module providing a fullyfeatured, highperformance inverter output stage for AC Induction, BLDC, and PMSM motors. These modules integrate optimized gate drive of the builtin IGBTs to minimize EMI and losses, while also providing multiple onmodule protection features www.onsemi.com including undervoltage lockouts, interlock function, overcurrent shutdown, thermal monitoring of drive IC, and fault reporting. The builtin, highspeed HVIC requires only a single supply voltage and translates the incoming logiclevel gate inputs to the highvoltage, highcurrent drive signals required to properly drive the modules robust shortcircuitrated IGBTs. Separate negative IGBT terminals are available for each phase to support the widest variety of control algorithms. Features UL Certified No. E209204 (UL1557) 600 V 10 A 3Phase IGBT Inverter Including Control IC for Gate Drive and Protections LowLoss, ShortCircuit Rated IGBTs Separate OpenEmitter Pins from LowSide IGBTs for ThreePhase Current Sensing Activehigh Interface, works with 3.3 / 5 V Logic, Schmitttrigger 3D Package Drawing (Click to Activate 3D Content) Input HVIC for Gate Driving, UnderVoltage, Over Current and SPMFAA25 ShortCircuit Current Protection CASE MODEZ Fault Output for UnderVoltage, Over Current and ShortCircuit Current Protection MARKING DIAGRAM InterLock Function to Prevent ShortCircuit ShutDown Input HVIC TemperatureSensing BuiltIn for Temperature Monitoring Isolation Rating: 1500 V / min. rms Applications Motion Control Home Appliance / Industrial Motor / HVAC Related Resources ON = ON Semiconductor Logo AN9112 Smart Power Module, Motion SPM 8 Series Users NB81060T3 = Specific Device Code Guide XXX = Lot Number Y = Year Integrated Power Functions WW = Work Week 600 V 10 A IGBT Inverter for Three Phase DC / AC Power Conversion (Please refer to Figure 2) ORDERING INFORMATION Integrated Drive, Protection and System Control Functions See detailed ordering and shipping information on page 9 of For Inverter Highside IGBTs: gate drive circuit, highvoltage this data sheet. isolated highspeed level shifting control circuit UnderVoltage LockOut (UVLO) protection (Note: Available bootstrap circuit example is given in Figures 4 and 16) Control Circuit UnderVoltage LockOut (UVLO) protection Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: August, 2019 Rev. 2 FNB81060T3/DFNB81060T3 For Inverter Lowside IGBTs: gate drive circuit, Over Current Protection (OCP), ShortCircuit Protection (SCP) control supply circuit UnderVoltage LockOut (UVLO) protection Fault Signaling: corresponding to UVLO (lowside supply) and SC faults Input Interface: Highactive interface, works with 3.3 / 5 V logic, Schmitt trigger input PIN CONFIGURATION (25) VB U (1) P (24) COM (23) IN UH (2) U, VS (22) IN U UL (21) V DD Case temperature (Tc) (20) /SD U Detecting point (3) N U (19) VB V (4) V, VS (18) IN V VH (17) IN VL (16) V DD (5) N (15) /SD V V (14) VB W (13) IN WH (12) IN WL (6) W, VS (11) V W DD (10) Csc (9) /FO,/SD ,V W TS (7) N (8) COM W Figure 1. Pin Configuration Top View Table 1. PIN DESCRIPTIONS Pin Number Pin Name Pin Description 1 P Positive DCLink Input 2 U, VS Output for U Phase U 3 N Negative DCLink Input for U Phase U 4 V, VS Output for V Phase V 5 N Negative DCLink Input for V Phase V 6 W, VS Output for W Phase W 7 N Negative DCLink Input for W Phase W 8 COM Common Supply Ground 9 /FO, /SD , V Fault Output, ShutDown Input for W Phase, Temperature Output of Drive IC W TS 10 CSC Shut Down Input for Over Current and Short Circuit Protection 11 VDD Common Bias Voltage for IC and IGBTs Driving 12 IN Signal Input for LowSide W Phase WL 13 IN Signal Input for HighSide W Phase WH 14 VB HighSide Bias Voltage for WPhase IGBT Driving W www.onsemi.com 2