FOD617C ON Semiconductor

FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers December 2008 FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers Features Description AC input response (FOD814 only) The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a Applicable to Pb-free IR reflow soldering silicon phototransistor output in a 4-pin dual in-line Compact 4-pin package package. The FOD617/817 Series consists of a gallium Current transfer ratio in selected groups: arsenide infrared emitting diode driving a silicon FOD617A: 4080% FOD817: 50600% phototransistor in a 4-pin dual in-line package. FOD617B: 63125% FOD817A:80160% FOD617C:100200% FOD817B: 130260% FOD617D:160320% FOD817C:200400% FOD814: 20300% FOD817D:300600% FOD814A: 50150% C-UL, UL and VDE approved High input-output isolation voltage of 5000Vrms Minimum BV of 70V guaranteed CEO Higher operating temperatures (versus H11AXXX counterparts) Applications FOD814 Series AC line monitor Unknown polarity DC sensor Telephone line interface FOD617 and FOD817 Series Power supply regulators Digital logic inputs Microprocessor inputs Functional Block Diagram ANODE, CATHODE 1 4 COLLECTOR 1 4 ANODE COLLECTOR CATHODE, ANODE 2 3 EMITTER 4 CATHODE 2 3 EMITTER FOD814 FOD617/817 1 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.1.1FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers Absolute Maximum Ratings (T = 25C Unless otherwise specied.) A Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Value Units Symbol Parameter FOD814 FOD617/817 TOTAL DEVICE T Storage Temperature -55 to +150 C STG T Operating Temperature -55 to +105 -55 to +110 C OPR T Lead Solder Temperature 260 for 10 sec C SOL P Total Power Dissipation 200 mW TOT EMITTER I Continuous Forward Current 50 50 mA F V Reverse Voltage 6 R P Power Dissipation 70 mW D Derate above 100C 1.7 mW/C DETECTOR V Collector-Emitter Voltage 70 V CEO V Emitter-Collector Voltage 6 6 (FOD817) V ECO 7 (FOD617) I Continuous Collector Current 50 mA C P Collector Power Dissipation 150 mW C Derate above 90C 2.9 mW/C 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.1.1 2