FOD817D3S ON Semiconductor

DATA SHEET www.onsemi.com 4-Pin DIP Phototransistor Optocouplers PDIP4 PDIP4 GW FOD814, FOD817 CASE 646CD CASE 709AH CASE 646CA Introduction or Description The FOD814 consists of two gallium arsenide infrared emitting MARKING DIAGRAM diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4pin dual inline package. The FOD817 Series consists of VXZZY a gallium arsenide infrared emitting diode driving a silicon Y 81x phototransistor in a 4pin dual inline package. Features V = VDE Mark X = One Digit Year Code AC Input Response (FOD814) ZZ = Two Digit Work Week Current Transfer Ratio in Selected Groups Y = Assembly Package Code FOD814: 20300% Y = Logo FOD814A: 50150% 81x = Specific Device Code x = 4 or 7 FOD817: 50600% FOD817A: 80160% FOD817B: 130260% ORDERING INFORMATION FOD817C: 200400% See detailed ordering and shipping information on page 8 of FOD817D: 300600% this data sheet. Minimum BV of 70 V Guaranteed CEO Safety and Regulatory Approvals UL1577, 5,000 VAC for 1 Minute RMS DIN EN/IEC6074755 This Device is PbFree Typical Applications FOD814 Series AC Line Monitor Unknown Polarity DC Sensor Telephone Line Interface FOD817 Series Power Supply Regulators Digital Logic Inputs Microprocessor Inputs Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: August, 2021 Rev. 7 FOD814/DFOD814, FOD817 FUNCTIONAL BLOCK DIAGRAM Anode, Cathode Collector Collector 1 4 Anode 4 1 Cathode, Anode 2 3 Emitter Cathode Emitter 2 3 Figure 1. Schematic FOD814 Figure 2. Schematic FOD817 SAFETY AND INSULATION RATINGS Parameter Characteristics Installation Classifications per DIN VDE < 150 V IIV RMS 0110/1.89 Table 1, For Rated Mains Voltage < 300 V IIII RMS Climatic Classification 30/110/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit V InputtoOutput Test Voltage, Method A, V x 1.6 = V , 1360 V PR IORM PR peak Type and Sample Test with t = 10 s, Partial Discharge < 5 pC m InputtoOutput Test Voltage, Method B, V x 1.875 = V , 1594 IORM PR 100% Production Test with t = 1 s, Partial Discharge < 5 pC m V Maximum Working Insulation Voltage 850 IORM V Highest Allowable OverVoltage 8000 IOTM External Creepage 7 mm External Clearance 7 External Clearance (for Option W, 0.4 Lead Spacing) 10 DTI Distance Through Insulation (Insulation Thickness) 0.4 T Case Temperature (Note 1) 175 C S I Input Current (Note 1) 400 mA S,INPUT P Output Power (Note 1) 700 mW S,OUTPUT 11 R Insulation Resistance at T , V = 500 V (Note 1) > 10 IO S IO As per DIN EN/IEC 6074755, this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. 1. Safety limit values maximum values allowed in the event of a failure. ABSOLUTE MAXIMUM RATINGS T = 25C unless otherwise specified. A Value FOD814 FOD817 Symbol Parameter Unit TOTAL DEVICE T Storage Temperature 55 to +150 C STG T Operating Temperature 55 to +105 55 to +110 OPR T Junction Temperature 55 to +125 J T Lead Solder Temperature 260 for 10 s SOL JunctiontoCase Thermal Resistance 210 C/W JC P Total Device Power Dissipation 200 mW TOT www.onsemi.com 2