4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers FODM121 Series, FODM124, FODM2701, FODM2705 www.onsemi.com Description The FODM121 series, FODM124, and FODM2701 consists of a gallium arsenide infrared emitting diode driving a phototransistor in a compact 4pin miniflat package. The lead pitch is 2.54 mm. The FODM2705 consists of two gallium arsenide infrared emitting diodes connected in inverse parallel for AC operation. MFP4 3.85X4.4, 2.54P Features CASE 100AP More than 5 mm Creepage/Clearance PIN CONNECTIONS Compact 4Pin Surface Mount Package (2.4 mm Maximum Standoff Height) Current Transfer Ratio in Selected Groups: ANODE 1 4 COLLECTOR DC Input: FODM121: 50600% 2 3 CATHODE EMITTER FODM121A: 100300% FODM121B: 50150% Equivalent Circuit FODM121C: 100200% FODM121, FODM124, FODM2701 FODM124: 100% MIN FODM2701: 50300% AC Input: 1 4 ANODE COLLECTOR FODM2705: 50300% Safety and Regulatory Approvals: CATHODE 2 3 EMITTER UL1577, 3,750 VAC for 1 Minute RMS DINEN/IEC6074755, 565 V Peak Working Insulation Voltage Equivalent Circuit This Device is PbFree and is RoHS Compliant FODM2705 Applications MARKING DIAGRAM Digital Logic Inputs Microprocessor Inputs ON Power Supply Monitor 121xx Twisted Pair Line Receiver VYX YR Telephone Line Receiver ON = ON Semiconductor Logo 121xx = Device Number V = DIN EN/IEC6074755 Option X = OneDigit Year Code YY = Digit Work Week R = Assembly Package Code ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: July, 2021 Rev. 3 FODM2705/DFODM121 Series, FODM124, FODM2701, FODM2705 SAFETY AND INSULATION RATINGS As per DIN EN/IEC 6074755, this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89. < 150 V IIV RMS For Rated Mains Voltage < 300 V IIII RMS Climatic Classification 40/110/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit V InputtoOutput Test Voltage, Method A, V x 1.6 = V , 904 V PR IORM PR peak Type and Sample Test with t = 10 s, Partial Discharge < 5 pC m InputtoOutput Test Voltage, Method B, V x 1.875 = V , 1060 V IORM PR peak 100% Production Test with t = 1 s, Partial Discharge < 5 pC m V Maximum Working Insulation Voltage 565 V IORM peak V Highest Allowable OverVoltage 6000 V IOTM peak External Creepage 5 mm External Clearance 5 mm 0.4 DTI Distance Through Insulation (Insulation Thickness) mm Case Temperature (Note 1) T 150 C S Input Current (Note 1) I 200 mA S,INPUT Output Power (Note 1) P 300 mW S,OUTPUT 9 Insulation Resistance at T , V = 500 V (Note 1) > 10 R S IO IO 1. Safety limit values maximum values allowed in the event of a failure. ABSOLUTE MAXIMUM RATINGS T = 25C Unless otherwise specified. A Symbol Parameter Value Unit TOTAL PACKAGE T Storage Temperature 40 to +125 C STG T Operating Temperature 40 to +110 C OPR T Junction Temperature 40 to +125 C J T Lead Solder Temperature 260 for 10 s C SOL EMITTER I Continuous Forward Current 50 mA F (avg) I Peak Forward Current (1 s pulse, 300 pps.) 1 A F (pk) V Reverse Voltage 6 V R P Power Dissipation 70 mW D Derate linearly (Above 75C) 1.41 mW/C DETECTOR I Continuous Collector Current 80 mA C V CollectorEmitter Voltage FODM121 Series, FODM124 80 V CEO FODM2701, FODM2705 40 V EmitterCollector Voltage 7 V ECO P Power Dissipation 150 mW D Derate linearly (Above 80C) 3.27 mW/C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 2