DATA SHEET www.onsemi.com Single Channel, AC/DC Sensing Input, Phototransistor Optocoupler In Half-Pitch MFP4 2.5x4.4, 1.27P Mini-Flat 4-Pin Package CASE 100AL FODM214, FODM217 Series MARKING DIAGRAM The FODM217 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. The FODM214 series consist of two gallium arsenide infrared emitting diodes connected in inverse parallel for AC operation. Both were built in a compact, halfpitch, miniflat, 4pin package. The lead pitch is 1.27 mm. Features Current Transfer Ratio Ranges from 20 to 600% 1. ON = Corporate Logo at I = 1 mA, V = 5 V, T = 25C F CE A 2. 21xx = Device Number FODM214 20 to 400% 3. V = DIN EN/IEC6074755 Option FODM214A 50 to 250% 4. X = OneDigit Year Code at I = 5 mA, V = 5 V, T = 25C 5. YY = Digit Work Week F CE A 6. R1 = Assembly Package Code FODM217A 80 to 160% FODM217B 130 to 260% FODM217C 200 to 400% PIN CONNECTIONS FODM217D 300 to 600% Safety and Regulatory Approvals: UL1577, 3750 VAC for 1 min RMS DIN EN/IEC6074755, 565 V Peak Working Insulation Voltage Applicable to Infrared Ray Reflow, 260C Typical Applications Primarily Suited for DCDC Converters For Ground Loop Isolation, Signal to Noise Isolation Communications Adapters, Chargers Consumer Appliances, Set Top Boxes Industrial Power Supplies, Motor Control, Programmable Logic Control ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: December, 2021 Rev. 3 FODM214/DFODM214, FODM217 Series SAFETY AND INSULATIONS RATING As per DIN EN/IEC 6074755, this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, < 150 V IIV RMS For Rated Mains Voltage < 300 V IIII RMS Climatic Classification 55/110/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit V InputtoOutput Test Voltage, Method A, V x 1.6 = V , 904 Vpeak PR IORM PR Type and Sample Test with t = 10 s, Partial Discharge < 5 pC m InputtoOutput Test Voltage, Method B, V x 1.875 = V , 1060 Vpeak IORM PR 100% Production Test with t = 1 s, Partial Discharge < 5 pC m V Maximum Working Insulation Voltage 565 Vpeak IORM V Highest Allowable OverVoltage 4,000 Vpeak IOTM 5 External Creepage mm External Clearance 5 mm DTI Distance Through Insulation (Insulation Thickness) 0.4 mm T 150 C S Case Temperature (Note 1) 200 mA I S,INPUT Input Current (Note 1) P 300 mW S,OUTPUT Output Power (Note 1) 9 R Insulation Resistance at T , V = 500 V (Note 1) > 10 IO S IO 1. Safety limit values maximum values allowed in the event of a failure. ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise specified.) A Symbol Parameter Value Units T Storage Temperature 55 to +150 C STG T Operating Temperature 55 to +110 C OPR T Junction Temperature 55 to +125 C J T Lead Solder Temperature 260 for 10 sec C SOL (Refer to Reflow Temperature Profile) EMITTER I Continuous Forward Current 50 mA F(average) IF Peak Forward Current (1 s pulse, 300 pps) 1 A (peak) V Reverse Input Voltage 6 V R PD Power Dissipation (Note 2) LED 70 mW DETECTOR I Continuous Collector Current 50 mA C(average) V CollectorEmitter Voltage 80 V CEO V EmitterCollector Voltage 7 V ECO PD Collector Power Dissipation (Note 2) 150 mW C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside these ratings. www.onsemi.com 2