DATA SHEET www.onsemi.com 3-Phase Inverter Automotive Power Module FTCO3V455A1 General Description The FTCO3V455A1 is a 40 V low R automotive qualified DS(ON) APMCBA19 power module featuring a 3phase MOSFET inverter optimized for CASE MODCG 12 V battery systems. It includes a precision shunt resistor for current sensing an NTC for temperature sensing and an RC snubber circuit. ELECTRICAL CONNECTION The module utilizes onsemis trench MOSFET technology and it is designed to provide a very compact and high performance variable speed motor drive for applications like electric power steering, electrohydraulic power steering, electric water pumps, electric oil pumps. The power module is 100% lead free, RoHS and UL compliant. Features 40 V 150 A 3phase Trench MOSFET Inverter Bridge 1% Precision Shunt Current Sensing Temperature Sensing DBC Substrate 100% Lead Free and RoHS Compliant with 2000/53/C Directive UL94V0 Compliant Isolation Rating of 2500 V rms/min MARKING DIAGRAM Mounting Through Screws Automotive Qualified Y Benefits FTCO3V455A1 Low Junctionsink Thermal Resistance Low Inverter Electrical Resistance High Current Handling Compact Motor Design Y = ON Semiconductor Highly Integrated Compact Design FTCO3V455A1 = Specific Device Code Better EMC and Electrical Isolation Easy and Reliable Installation ORDERING INFORMATION Improved Overall System Reliability See detailed ordering and shipping information on page 8 of this data sheet. Applications Electric and ElectroHydraulic Power Steering Electric Water Pump Electric Oil Pump Electric Fan Flammability Information All Materials Present in the Power Module Meet UL Flammability Rating Class 94 V0 or Higher Solder Solder Used is a Lead Free SnAgCu Alloy Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: November, 2021 Rev. 2 FTCO3V455A1/DFTCO3V455A1 ABSOLUTE MAXIMUM RATINGS (T = 25 C, Unless Otherwise Specified) J Symbol Parameter Rating Unit V (Q1~Q6) Drain to Source Voltage 40 V DS V (Q1~Q6) Gate to Source Voltage 20 V GS I (Q1~Q6) Drain Current Continuous (T = 25 C, V = 10 V) 150 A D C GS E (Q1~Q6) Single Pulse Avalanche Energy (Note 1) 947 mJ AS P Power Dissipation 115 W D T Maximum Junction Temperature 175 C J T Storage Temperature 125 C STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE Symbol Parameter Min. Typ. Max. Unit Rthjc Q1 Thermal Resistance J C 0.8 1.1 C/W Thermal Resistance Q2 Thermal Resistance J C 0.8 1.1 C/W Junction to case, Single Inverter FET, Q3 Thermal Resistance J C 0.8 1.1 C/W chip center Q4 Thermal Resistance J C 0.8 1.1 C/W (Note 2) Q5 Thermal Resistance J C 0.8 1.1 C/W Q6 Thermal Resistance J C 0.8 1.1 C/W T Maximum Junction Temperature 175 C J T Operating Sink Temperature 40 120 C S T Storage Temperature 40 125 C STG 1. Starting T = 25 C, V = 20 V, I = 64 A, L = 480 H. J DS AS 2. These values are based on Thermal simulations and PV level measurements. These values assume a single MOSFET is on, and the test condition for referenced temperature is Chip Center. This means that the DT is measured between the T of each MOSFET and the temperature of the case located immediately under the center J of the chip. www.onsemi.com 2