6-Pin DIP Phototransistor Optocouplers H11AV1M, H11AV1AM Description The general purpose optocouplers consist of a gallium arsenide www.onsemi.com infrared emitting diode driving a silicon phototransistor in a 6pin dual inline white package. Features PDIP6 8.51x6.35, 2.54P H11AV1M and H11AV1AM Feature 0.3 and 0.4 InputOutput 6 CASE 646BY Lead Spacing Respectively 1 Safety and Regulatory Approvals: UL1577, 4,170 VAC for 1 Minute RMS PDIP6 8.51x6.35, 2.54P DINEN/IEC6074755, 850 V Peak Working Insulation Voltage CASE 646BX 6 Applications 1 Power Supply Regulators Digital Logic Inputs PDIP6 8.51x6.35, 2.54P Microprocessor Inputs CASE 646BZ 6 1 MARKING DIAGRAM ON H11AV1 VXYYQ H11AV1 = Specific Device Code V = DIN EN/IEC6074755 Option (only appears on component ordered with this option) X = OneDigit Year Code YY = Digit Work Week Q = Assembly Package Code SCHEMATIC ANODE 1 6 BASE CATHODE 2 5 COLLECTOR N/C 3 4 EMITTER ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: March, 2020 Rev. 2 H11AV1M/DH11AV1M, H11AV1AM SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 6074755, this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.) Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, <150 V IIV RMS For Rated Mains Voltage <300 V IIV RMS Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit V InputtoOutput Test Voltage, Method A, V x 1.6 = V , Type and Sample Test 1360 V PR IORM PR peak with t = 10 s, Partial Discharge < 5 pC m InputtoOutput Test Voltage, Method B, V x 1.875 = V , 100% Production Test 1594 V IORM PR peak with t = 1 s, Partial Discharge < 5 pC m V Maximum Working Insulation Voltage 850 V IORM peak V Highest Allowable OverVoltage 6000 V IOTM peak External Creepage 7 mm External Clearance 7 mm External Clearance (for Option TV, 0.4 Lead Spacing) 10 mm DTI Distance Through Insulation (Insulation Thickness) 0.5 mm T Case Temperature (Note 1) 175 C S I Input Current (Note 1) 350 mA S,INPUT P Output Power (Note 1) 800 mW S,OUTPUT 9 R Insulation Resistance at T , V = 500 V (Note 1) >10 IO S IO 1. Safety limit values maximum values allowed in the event of a failure. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Max Unit TOTAL DEVICE T Storage Temperature 40 to +125 C STG T Operating Temperature 40 to +100 C OPR T Junction Temperature 40 to +125 C J T Lead Solder Temperature 260 for 10 seconds C SOL P Total Device Power Dissipation T = 25C 270 mW D A Derate Above 25C 2.94 mW/C EMITTER I DC / Average Forward Input Current 60 mA F V Reverse Input Voltage 6 V R P LED Power Dissipation T = 25C 120 mW D A Derate Above 25C 1.41 mW/C DETECTOR V CollectortoEmitter Voltage 70 V CEO V CollectortoBase Voltage 70 V CBO V EmittertoCollector Voltage 7 V ECO P Detector Power Dissipation T = 25C 150 mW D A Derate Above 25C 1.76 mW/C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 2