Ordering number : EN*A2269 LE25S81QE Advance Information LE25S81QE Specifications Absolute Maximum Ratings Parameter Symbol Conditions Ratings unit Maximum supply voltage With respect to V -0.5 to +2.4 V SS DC voltage (all pins) With respect to V -0.5 to V +0.5 V SS DD Storage temperature Tstg -55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Operating Conditions Parameter Symbol Conditions Ratings unit Operating supply voltage 1.65 to 1.95 V Operating ambient temperature Write operation -40 to +90 C Read operation -40 to +90 Allowable DC Operating Conditions Ratings Parameter Symbol Conditions unit min typ max SCK = 0.1V /0.9V , 30MHz 6mA DD DD Single HOLD = WP = 0.9V , DD 40MHz 8mA Read mode operating current I CCR SO = open Dual *1 40MHz 10 mA Write mode operating current I t = t = t = typ., t = max CCW SSE SE CHE PP 40mA (erase+page program) CMOS standby current I CS = V , HOLD = WP = V , SB DD DD 50 A SI = V /V , SO = open SS DD CS HOLD WP Power-down standby current I = V , = = V , DSB DD DD 15 A SI = V /V , SO = open SS DD Input leakage current I 2 A LI Output leakage current I 2 A LO Input low voltage V -0.3 0.3V V IL DD Input high voltage V 0.7V V +0.3 V IH DD DD Output low voltage V I = 100A, V = V min 0.2 OL OL DD DD V I = 1.6mA, V = V min 0.4 OL DD DD Output high voltage V I = -100A, V = V min V-0.2 V OH OH DD DD CC *1: Dual Read is not supported on LE25S81QE. Data hold, Rewriting frequency Parameter Conditions min max unit Program/Erase 100,000 times/ Rewriting frequency Sector Status resister write 1,000 Data hold 20 year Pin Capacitance at Ta = 25C, f = 1MHz Ratings Parameter Symbol Conditions unit max Output pin capacitance C V = 0V 12 pF SO SO Input pin Capacitance C V = 0V 6 pF IN IN Note: These parameter values do not represent the results of measurements undertaken for all devices but rather values for some of the sampled devices. No.A2269-2/23