MBR40H100WTG Switch-mode Power Rectifier 100 V, 40 A Features and Benefits MBR40H100WTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) T = 148C, per Diode 20 C T = 150C, per Device 40 C Peak Repetitive Forward Current I 40 A FRM (Square Wave, 20 kHz) T = 144C C Nonrepetitive Peak Surge Current I 200 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature (Note 1) T +175 C J Storage Temperature T 65 to +175 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Controlled Avalanche Energy (see test conditions in Figures 10 and 11) W 400 mJ AVAL ESD Ratings: Machine Model = C > 400 V Human Body Model = 3B > 8000 THERMAL CHARACTERISTICS Maximum Thermal Resistance JunctiontoCase R 0.58 C/W JC JunctiontoAmbient (Socket Mounted) R 32 JA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS Characterisitc Symbol Min Typ Max Unit Instantaneous Forward Voltage (Note 2) v V F (I = 20 A, T = 25C) 0.74 0.80 F J (I = 20 A, T = 125C) 0.61 0.67 F J (I = 40 A, T = 25C) 0.85 0.90 F J (I = 40 A, T = 125C) 0.72 0.76 F J Instantaneous Reverse Current (Note 2) i mA R (Rated dc Voltage, T = 125C) 2.0 10 J (Rated dc Voltage, T = 25C) 0.0012 0.01 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.