MBRAF360T3G, NRVBAF360T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metaltosilicon power diode. Stateoftheart geometry features www.onsemi.com epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or SCHOTTKY BARRIER as free wheeling and polarity protection diodes in surface mount RECTIFIER applications where compact size and weight are critical to the system. 3.0 AMPERE Features 60 VOLTS Low Profile Package for Space Constrained Applications Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction 150C Operating Junction Temperature GuardRing for Stress Protection SMAFL NRVB Prefix for Automotive and Other Applications Requiring CASE 403AA Unique Site and Control Change Requirements AECQ101 STYLE 6 Qualified and PPAP Capable These are PbFree and HalideFree Devices MARKING DIAGRAM Mechanical Charactersistics Case: Epoxy, Molded, Epoxy Meets UL 94, V0 RAH Weight: 95 mg (approximately) AYWW Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable RAH = Specific Device Code Lead and Mounting Surface Temperature for Soldering Purposes: A = Assembly Location 260C Max. for 10 Seconds Y = Year WW = Work Week Cathode Polarity Band = PbFree Package Device Meets MSL 1 Requirements ESD Ratings: Machine Model = C ESD Ratings: Human Body Model = 3B ORDERING INFORMATION Device Package Shipping MBRAF360T3G SMAFL 5000 / Tape & Reel (PbFree) NRVBAF360T3G SMAFL 5000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: December, 2016 Rev. 3 MBRAF360/DMBRAF360T3G, NRVBAF360T3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 60 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I 3.0 T = 100C A F(AV) L 4.0 T = 80C L Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz) T = 125C 6 R C Nonrepetitive Peak Surge Current I A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) 125 Storage Temperature Range T 65 to +150 C stg Operating Junction Temperature (Note 1) T 65 to +150 C J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoLead (Note 2) R 25 C/W JL Thermal Resistance, JunctiontoAmbient (Note 2) R 90 C/W JA 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3) V V F (i = 3.0 A, T = 25C) 0.63 F J Maximum Instantaneous Reverse Current (Note 3) i mA R (Rated dc Voltage, T = 25C) 0.03 J (Rated dc Voltage, T = 100C) 3.0 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. 10 10 T = 150C J T = 175C J T = 175C J 1 1 T = 100C T = 150C J J T = 25C J T = 25C J T = 100C 0.1 0.1 J T = 40C T = 40C J J 0.01 0.01 0.0 0.2 0.4 0.6 0.8 0.0 0.2 0.4 0.6 0.8 V , INSTANTANEOUS FORWARD VOLTAGE (V) V , INSTANTANEOUS FORWARD VOLTAGE (V) F F Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage www.onsemi.com 2 I , INSTANTANEOUS FORWARD F CURRENT (A) I , INSTANTANEOUS FORWARD F CURRENT (A)