MC33153 Single IGBT Gate Driver The MC33153 is specifically designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although designed for driving discrete and module IGBTs, this device offers a cost effective solution for driving power MOSFETs and Bipolar MC33153 MAXIMUM RATINGS Rating Symbol Value Unit Power Supply Voltage V to V V V 20 V CC EE CC EE Kelvin Ground to V (Note 1) KGND V EE EE Logic Input V V 0.3 to V V in EE CC Current Sense Input V 0.3 to V V S CC Blanking/Desaturation Input V 0.3 to V V BD CC Gate Drive Output I A O Source Current 1.0 Sink Current 2.0 Diode Clamp Current 1.0 Fault Output I mA FO Source Current 25 Sink Current 10 Power Dissipation and Thermal Characteristics D Suffix SO8 Package, Case 751 Maximum Power Dissipation T = 50C P 0.56 W A D Thermal Resistance, JunctiontoAir R 180 C/W JA P Suffix DIP8 Package, Case 626 Maximum Power Dissipation T = 50C 1.0 W P A D Thermal Resistance, JunctiontoAir R 100 C/W JA Operating Junction Temperature T +150 C J Operating Ambient Temperature T 40 to +105 C A Storage Temperature Range T 65 to +150 C stg Electrostatic Discharge Sensitivity (ESD) (Note 2) ESD V Human Body Model (HBM) 2500 Machine Model (MM) 250 Charged Device Model (CDM) 1500 NOTE: ESD data available upon request. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Kelvin Ground must always be between V and V . EE CC 2. ESD protection per JEDEC Standard JESD22A114F for HBM per JEDEC Standard JESD22A115A for MM per JEDEC Standard JESD22C101D for CDM. ELECTRICAL CHARACTERISTICS (V = 15 V, V = 0 V, Kelvin GND connected to V . For typical values T = 25C, CC EE EE A for min/max values T is the operating ambient temperature range that applies (Note 3), unless otherwise noted.) A Characteristic Symbol Min Typ Max Unit LOGIC INPUT Input Threshold Voltage V High State (Logic 1) V 2.70 3.2 IH Low State (Logic 0) V 1.2 2.30 IL Input Current A High State (V = 3.0 V) I 130 500 IH IH Low State (V = 1.2 V) I 50 100 IL IL DRIVE OUTPUT Output Voltage V Low State (I = 1.0 A) V 2.0 2.5 Sink OL High State (I = 500 mA) V 12 13.9 Source OH Output PullDown Resistor R 100 200 k PD FAULT OUTPUT Output Voltage V Low State (I = 5.0 mA) V 0.2 1.0 Sink FL High State (I = 20 mA) V 12 13.3 Source FH 3. Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible. T = 40C for MC33153 T = +105C for MC33153 low high